Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots

Cheng, Guanghui1; Li, Baikui1,3; Zhao, Chunyu1,2; Yan, Xin1; Wang, Hong4; Lau, Kei May2; Wang, Jiannong1

2018-09

10.1021/acs.nanolett.8b02143

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

van der Waals heterostructures that are usually formed using atomically thin transition-metal dichalcogenides (TMDCs) with a direct band gap in the near-infrared to the visible range are promising candidates for low dimension optoelectronic applications. The interlayer interaction or coupling between two-dimensional (2D) layer and the substrate or between adjacent 2D layers plays an important role in modifying the properties of the individual 2D material or device performances through Coulomb interaction or forming interlayer excitons. Here, we report the realization of quasi-zero-dimensional (OD) photon emission of WS2 in a coupled hybrid structure of monolayer WS2 and InGaN quantum dots (QDs). An interfacially bound exciton, i.e., the coupling between the excitons in WS2 and the electrons in QDs, has been identified. The emission of this interfacially bound exciton inherits the 0D confinement of QDs as well as the spin-valley physics of excitons in monolayer WS2. The effective coupling between 2D materials and conventional semiconductors observed in this work provides an effective way to realize the 0D emission of 2D materials and opens the potential of compact on-chip integration of valleytronics and conventional electronics and optoelectronics.

Transition-metal dichalcogenides quantum dots interfacial state photoluminescence

SCI ; EI

英语

NI期刊

其他

National Natural Science Foundation of China[61631166004]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000444793500041

AMER CHEMICAL SOC

20183705793519

D region ; Energy gap ; Excitons ; III-V semiconductors ; Infrared devices ; Monolayers ; Nanocrystals ; Photoluminescence ; Semiconductor alloys ; Transition metals ; Tungsten compounds ; Van der Waals forces

Meteorology:443 ; Metallurgy and Metallography:531 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Nanotechnology:761 ; Physical Chemistry:801.4

MATERIALS SCIENCE

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
3.Shenzhen Univ, Coll Optoelect Engn, Nanhai Ave 3688, Shenzhen, Peoples R China
4.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

Cheng, Guanghui,Li, Baikui,Zhao, Chunyu,et al. Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots[J]. NANO LETTERS,2018,18(9):5640-5645.

Cheng, Guanghui.,Li, Baikui.,Zhao, Chunyu.,Yan, Xin.,Wang, Hong.,...&Wang, Jiannong.(2018).Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots.NANO LETTERS,18(9),5640-5645.

Cheng, Guanghui,et al."Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots".NANO LETTERS 18.9(2018):5640-5645.