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题名

High-Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Deposition

作者
通讯作者Zhao, Yue; Zhang, Yanfeng; Zhang, Qing
发表日期
2018-09
DOI
发表期刊
ISSN
1936-0851
EISSN
1936-086X
卷号12期号:9页码:9390-9396
摘要
The realization of low-energy-consumption lasers based on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) is crucial for the development of optical communications, flexible displays, and lasers on the chip level. However, among the as-demonstrated TMDC-based lasers so far, the gain materials are mainly achieved by a mechanical exfoliation approach accompanied by poor reproducibility and controllability. In this work, we report a controllable design for generating large-scale lasing from chemical vapor deposition (CVD)-derived high-quality monolayer MoS2 film. Strong continuous-wave optically driven whispering-gallery-mode lasing is achieved in a wide temperature range from 77 to 400 K. The eminent lasing performances result from the strong spatial confinement of carriers and the enhanced efficiency of spontaneous emission owing to the lensing and screening effects of silica microsphere cavities. These findings not only advance the fundamental understanding of 2D lasing effects but also provide solutions to fabricate low-cost, scalable, and integratable TMDC-based lasers.
关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI期刊
学校署名
通讯
资助项目
Shandong Province Key Research Development Program[2015GGX101017]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000445972400058
出版者
EI入藏号
20183805835878
EI主题词
Energy utilization ; Flexible displays ; Layered semiconductors ; Microspheres ; Molybdenum compounds ; Monolayers ; Optical communication ; Semiconductor lasers ; Silica ; Transition metals ; Whispering gallery modes
EI分类号
Energy Utilization:525.3 ; Metallurgy and Metallography:531 ; Waveguides:714.3 ; Optical Communication Systems:717.1 ; Computer Peripheral Equipment:722.2 ; Semiconductor Lasers:744.4.1 ; Chemical Reactions:802.2
来源库
Web of Science
引用统计
被引频次[WOS]:53
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/27301
专题量子科学与工程研究院
理学院_物理系
作者单位
1.Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
2.Peking Univ, Res Ctr Wide Gap Semicond, Beijing 100871, Peoples R China
3.Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Div Nanophoton, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China
4.Peking Univ, Ctr Nanochem CNC, Acad Adv Interdisciplinary Studies, Beijing Natl Lab Mol Sci,Coll Chem & Mol Engn, Beijing 100871, Peoples R China
5.Peking Univ, Collaborat Innovat Ctr Quantum Matter, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
6.Peking Univ, Collaborat Innovat Ctr Quantum Matter, Dept Phys, Beijing 100871, Peoples R China
7.Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Sichuan, Peoples R China
8.Qilu Univ Technol, Shandong Acad Sci, Sch Sci, Jinan 250353, Shandong, Peoples R China
9.Southern Univ Sci & Technol, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
10.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
通讯作者单位量子科学与工程研究院;  物理系
推荐引用方式
GB/T 7714
Zhao, Liyun,Shang, Qiuyu,Gao, Yan,et al. High-Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Deposition[J]. ACS Nano,2018,12(9):9390-9396.
APA
Zhao, Liyun.,Shang, Qiuyu.,Gao, Yan.,Shi, Jia.,Liu, Zhen.,...&Zhang, Qing.(2018).High-Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Deposition.ACS Nano,12(9),9390-9396.
MLA
Zhao, Liyun,et al."High-Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Deposition".ACS Nano 12.9(2018):9390-9396.
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