Two-dimensional Dirac semiconductor and its material realization

Fu, Botao1; Ma, Da-Shuai2,3; He, Chao1,4; Zhao, Yong-Hong1; Yu, Zhi-Ming2,3; Yao, Yugui2,3

2022-01-19

10.1103/PhysRevB.105.035126

PHYSICAL REVIEW B   影响因子和分区

2469-9950

2469-9969

We propose a new concept of a two-dimensional (2D) Dirac semiconductor which is characterized by the emergence of four-fold degenerate band crossings near the band edge, and provide a generic approach to realize this novel semiconductor in the community of material science. Based on the first-principle calculations and symmetry analysis, we discover recently synthesized triple-layer (TL) Bi2OS2 is such a 2D Dirac semiconductor that features a Dirac cone at the X/Y point, protected by a centrosymmetric nonsymmorphic space group. Due to the sandwich-like structure, each Dirac fermion in TL-Bi2OS2 can be regarded as a combination of two Weyl fermions with opposite chiralities, degenerate in momentum-energy space but separated in real space. Such a 2D Dirac semiconductor carries hidden layer-dependent helical spin textures. Moreover, novel topological phase transitions are flexibly achieved in TL-Bi2OS2: (i) a vertical electric field can drive it into the Weyl semiconductor with switchable spin polarization direction; (ii) an extensive strain is able to generate ferroelectric polarization and actuate it into the Weyl nodal ring around the X point and into another type of four-fold degenerate point at the Y point. Our work extends the Dirac fermion into semiconductor systems and provides a promising avenue to integrate spintronics and optoelectronics in topological materials.

SCI ; EI

英语

其他

National Key R&D Program of China[2020YFA0308800] ; National Natural Science Foundation of China[11734003,12061131002] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; Key Project of Sichuan Science and Technology Program[2019YFSY0044] ; Sichuan Normal University[341829001]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000747533500003

AMER PHYSICAL SOC

20220511577307

Electric fields ; Layered semiconductors ; Spin polarization ; Textures ; Topology

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; High Energy Physics:932.1

PHYSICS

Web of Science

1.Sichuan Normal Univ, Coll Phys & Elect Engn, Ctr Computat Sci, Chengdu 610068, Peoples R China
2.Beijing Inst Technol, Sch Phys, Ctr Quantum Phys, Key Lab Adv Optoelect Quantum Architecture & Meas, Beijing 100081, Peoples R China
3.Beijing Inst Technol, Sch Phys, Beijing Key Lab Nanophoton & Ultrafine Optoelect, Beijing 100081, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Fu, Botao,Ma, Da-Shuai,He, Chao,et al. Two-dimensional Dirac semiconductor and its material realization[J]. PHYSICAL REVIEW B,2022,105(3).

Fu, Botao,Ma, Da-Shuai,He, Chao,Zhao, Yong-Hong,Yu, Zhi-Ming,&Yao, Yugui.(2022).Two-dimensional Dirac semiconductor and its material realization.PHYSICAL REVIEW B,105(3).

Fu, Botao,et al."Two-dimensional Dirac semiconductor and its material realization".PHYSICAL REVIEW B 105.3(2022).