Multi-carrier transport in ZrTe5 film

Tang, Fangdong1,2,3; Wang, Peipei3; Wang, Peng3; Gan, Yuan3; Wang, Le1,2; Zhang, Wei1,2; Zhang, Liyuan3

2018-08

10.1088/1674-1056/27/8/087307

Chinese Physics B   影响因子和分区

1674-1056

1741-4199

Single-layered zirconium pentatelluride (ZrTe5) has been predicted to be a large-gap two-dimensional (2D) topological insulator, which has attracted particular attention in topological phase transitions and potential device applications. Herein, we investigated the transport properties in ZrTe5 films as a function of thickness, ranging from a few nm to several hundred nm. We determined that the temperature of the resistivity anomaly peak (T-p) tends to increase as the thickness decreases. Moreover, at a critical thickness of similar to 40 nm, the dominating carriers in the films change from n-type to p-type. A comprehensive investigation of Shubnikov-de Hass (SdH) oscillations and Hall resistance at variable temperatures revealed a multi-carrier transport tendency in the thin films. We determined the carrier densities and mobilities of two majority carriers using the simplified two-carrier model. The electron carriers can be attributed to the Dirac band with a non-trivial Berry phase pi, while the hole carriers may originate from surface chemical reaction or unintentional doping during the microfabrication process. It is necessary to encapsulate the ZrTe5 film in an inert or vacuum environment to potentially achieve a substantial improvement in device quality.

multi-carrier transport ZrTe5 film thickness-dependence gate-dependence

SCI ; EI

英语

其他

Shenzhen Peacock Program[KQTD2016022619565991]

Physics

Physics, Multidisciplinary

WOS:000442031400007

IOP PUBLISHING LTD

20183405716791

Carrier mobility ; Carrier transport ; Semiconductor doping ; Surface reactions ; Tellurium compounds ; Thin films

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Chemical Reactions:802.2

Web of Science

1.Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China
2.Renmin Univ China, Beijing Key Lab Optoelect Funct Natual Mat & Mico, Beijing 100872, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Tang, Fangdong,Wang, Peipei,Wang, Peng,et al. Multi-carrier transport in ZrTe5 film[J]. Chinese Physics B,2018,27(8).

Tang, Fangdong.,Wang, Peipei.,Wang, Peng.,Gan, Yuan.,Wang, Le.,...&Zhang, Liyuan.(2018).Multi-carrier transport in ZrTe5 film.Chinese Physics B,27(8).

Tang, Fangdong,et al."Multi-carrier transport in ZrTe5 film".Chinese Physics B 27.8(2018).