| 题名 | An electron compensation mechanism for the polymorphism of boron monolayers |
| 作者 | |
| 通讯作者 | Xu, Hu; Yang, Xiao-Bao |
| 发表日期 | 2018-07-28
|
| DOI | |
| 发表期刊 | |
| ISSN | 2040-3364
|
| EISSN | 2040-3372
|
| 卷号 | 10期号:28页码:13410-13416 |
| 摘要 | Boron monolayers have been increasingly attractive, while it is still a challenge to understand their structural stabilities, due to electron deficiency and multi-center bonds. In this work, we propose the average electron compensation (AEC) mechanism for boron monolayers based on high-throughput first-principles calculations. It is found that the AEC parameter () tends to be zero for the stable free-standing boron monolayers. In addition, this mechanism can quantitatively describe the stability of boron monolayers on various metal substrates, providing direct suggestions for experimentalists to synthesize various boron monolayers for practical applications. |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 第一
; 通讯
|
| 资助项目 | Guangdong Natural Science Funds for Doctoral Program[2017A030310086]
|
| WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS类目 | Chemistry, Multidisciplinary
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
|
| WOS记录号 | WOS:000439319000014
|
| 出版者 | |
| EI入藏号 | 20183005597140
|
| EI主题词 | Calculations
; Monolayers
; Stability
|
| EI分类号 | Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3
; Mathematics:921
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：18
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/27466 |
| 专题 | 理学院_物理系 |
| 作者单位 | 1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 2.South China Univ Technol, Dept Phys, Guangzhou 510640, Guangdong, Peoples R China |
| 第一作者单位 | 物理系 |
| 通讯作者单位 | 物理系 |
| 第一作者的第一单位 | 物理系 |
| 推荐引用方式 GB/T 7714 |
Xu, Shao-Gang,Li, Xiao-Tian,Zhao, Yu-Jun,et al. An electron compensation mechanism for the polymorphism of boron monolayers[J]. Nanoscale,2018,10(28):13410-13416.
|
| APA |
Xu, Shao-Gang,Li, Xiao-Tian,Zhao, Yu-Jun,Liao, Ji-Hai,Xu, Hu,&Yang, Xiao-Bao.(2018).An electron compensation mechanism for the polymorphism of boron monolayers.Nanoscale,10(28),13410-13416.
|
| MLA |
Xu, Shao-Gang,et al."An electron compensation mechanism for the polymorphism of boron monolayers".Nanoscale 10.28(2018):13410-13416.
|
| 条目包含的文件 | 条目无相关文件。 | |||||
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
;
修改评论