Anisotropies of angle-resolved polarized Raman response identifying in low miller index β-Ga2O3 single crystal

Zhang，Kun1; Xu，Zongwei1; Zhao，Junlei2; Wang，Hong3; Hao，Jianmin4; Zhang，Shengnan4; Cheng，Hongjuan4; Dong，Bing1

2022-04-15

10.1016/j.apsusc.2022.152426

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Beta-phase gallium oxide (β-GaO) with a monoclinic lattice structure is a research hotspot in the field of ultra-wide bandgap semiconductors in the world and displays intriguing anisotropic properties. Here, we synthesize β-GaO single-crystal (SC) using the edge-defined film-fed growth method and systematically investigate the anisotropic structural and vibrational properties. The anisotropic nature of β-GaO SC is revealed by angle-resolved polarized Raman spectroscopy under linearly polarized excitations, in which different vibration modes exhibit pronounced periodic variations in intensity. In the detection of different excitation wavelengths, not only the Raman intensity show significant change, but also the strongest main peak of the Raman modes also shows significant difference. In addition, the angular dependence of the peak intensities of the A(4), A(6), A(7), A(10) and B modes will also be affected by different low Miller index. All the experimental results above are beneficial to the understanding of inelastic light-scattering process of β-GaO SC.

Angle-resolved polarized Raman spectroscopy (ARPRS) Crystal orientation Semiconductor materials β-Ga2O3 SC

SCI ; EI

英语

其他

National Natural Science Foundation of China[52035009,51761135106] ; 2020 Mobility Programme of the Sino-German Center for Research Promotion[M-0396] ; 111 project by the State Administration of Foreign Experts Affairs[B07014] ; 111 project by Ministry of Education of China[B07014]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000771504900001

ELSEVIER

20220311459371

Anisotropy ; Crystal orientation ; Gallium compounds ; Light scattering ; Polarization ; Raman spectroscopy ; Sapphire ; Wide band gap semiconductors

Gems:482.2.1 ; Semiconducting Materials:712.1 ; Light/Optics:741.1 ; Physical Properties of Gases, Liquids and Solids:931.2 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

2-s2.0-85122622412

Scopus

1.State Key Laboratory of Precision Measuring Technology & Instruments,Laboratory of Micro/Nano Manufacturing Technology,Tianjin University,Tianjin,300072,China
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
3.State Key Laboratory of Separation Membranes and Membrane Processes,Tianjin Polytechnic University,Tianjin,300387,China
4.The 46th Research Institute,China Electronics Technology Group Corporation (CETC),Tianjin,300220,China

Zhang，Kun,Xu，Zongwei,Zhao，Junlei,et al. Anisotropies of angle-resolved polarized Raman response identifying in low miller index β-Ga2O3 single crystal[J]. APPLIED SURFACE SCIENCE,2022,581.

Zhang，Kun.,Xu，Zongwei.,Zhao，Junlei.,Wang，Hong.,Hao，Jianmin.,...&Dong，Bing.(2022).Anisotropies of angle-resolved polarized Raman response identifying in low miller index β-Ga2O3 single crystal.APPLIED SURFACE SCIENCE,581.

Zhang，Kun,et al."Anisotropies of angle-resolved polarized Raman response identifying in low miller index β-Ga2O3 single crystal".APPLIED SURFACE SCIENCE 581(2022).