中文版 | English
题名

Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators

作者
通讯作者Lu, Hai-Zhou
发表日期
2018-07-20
DOI
发表期刊
ISSN
0031-9007
EISSN
1079-7114
卷号121期号:3
摘要

Identifying topological insulators and semimetals often focuses on their surface states, using spectroscopic methods such as angle-resolved photoemission spectroscopy or scanning tunneling microscopy. In contrast, studying the topological properties of topological insulators from their bulk-state transport is more accessible in most labs but seldom addressed. We show that, in the quantum limit of a topological insulator, the backscattering between the only two states on the Fermi surface of the lowest Landau band can be forbidden at a critical magnetic field. The conductivity is determined solely by the backscattering between the two states, leading to a resistance dip that may serve as a signature for topological insulator phases. More importantly, this forbidden backscattering mechanism for the resistance dip is irrelevant to details of disorder scattering. Our theory can be applied to revisit the experiments on Pb1-xSnxSe, ZrTe5, and Ag2Te families, and will be particularly useful for controversial small-gap materials at the boundary between topological and normal insulators.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
第一 ; 通讯
资助项目
Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20170303165926217]
WOS研究方向
Physics
WOS类目
Physics, Multidisciplinary
WOS记录号
WOS:000439308700009
出版者
EI入藏号
20183005606970
EI主题词
Backscattering ; Electric Insulators ; Lead Compounds ; Photoelectron Spectroscopy ; Quantum Theory ; Scanning Tunneling Microscopy ; Selenium Compounds ; Silver Compounds ; Spectroscopic Analysis ; Tellurium Compounds ; Tin Compounds ; Zirconium Compounds
EI分类号
Chemistry:801 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Quantum Theory ; Quantum Mechanics:931.4
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:8
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/27479
专题量子科学与工程研究院
理学院_物理系
作者单位
1.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Technol, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China
5.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
第一作者单位量子科学与工程研究院;  物理系
通讯作者单位量子科学与工程研究院;  物理系
第一作者的第一单位量子科学与工程研究院
推荐引用方式
GB/T 7714
Chen, Yiyuan,Lu, Hai-Zhou,Xie, X. C.. Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators[J]. PHYSICAL REVIEW LETTERS,2018,121(3).
APA
Chen, Yiyuan,Lu, Hai-Zhou,&Xie, X. C..(2018).Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators.PHYSICAL REVIEW LETTERS,121(3).
MLA
Chen, Yiyuan,et al."Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators".PHYSICAL REVIEW LETTERS 121.3(2018).
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