题名 | Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators |
作者 | |
通讯作者 | Lu, Hai-Zhou |
发表日期 | 2018-07-20
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DOI | |
发表期刊 | |
ISSN | 0031-9007
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EISSN | 1079-7114
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卷号 | 121期号:3 |
摘要 | Identifying topological insulators and semimetals often focuses on their surface states, using spectroscopic methods such as angle-resolved photoemission spectroscopy or scanning tunneling microscopy. In contrast, studying the topological properties of topological insulators from their bulk-state transport is more accessible in most labs but seldom addressed. We show that, in the quantum limit of a topological insulator, the backscattering between the only two states on the Fermi surface of the lowest Landau band can be forbidden at a critical magnetic field. The conductivity is determined solely by the backscattering between the two states, leading to a resistance dip that may serve as a signature for topological insulator phases. More importantly, this forbidden backscattering mechanism for the resistance dip is irrelevant to details of disorder scattering. Our theory can be applied to revisit the experiments on Pb1-xSnxSe, ZrTe5, and Ag2Te families, and will be particularly useful for controversial small-gap materials at the boundary between topological and normal insulators. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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重要成果 | NI论文
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学校署名 | 第一
; 通讯
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资助项目 | Science, Technology and Innovation Commission of Shenzhen Municipality[ZDSYS20170303165926217]
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WOS研究方向 | Physics
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WOS类目 | Physics, Multidisciplinary
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WOS记录号 | WOS:000439308700009
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出版者 | |
EI入藏号 | 20183005606970
|
EI主题词 | Backscattering
; Electric Insulators
; Lead Compounds
; Photoelectron Spectroscopy
; Quantum Theory
; Scanning Tunneling Microscopy
; Selenium Compounds
; Silver Compounds
; Spectroscopic Analysis
; Tellurium Compounds
; Tin Compounds
; Zirconium Compounds
|
EI分类号 | Chemistry:801
; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4
; Quantum Theory
; Quantum Mechanics:931.4
|
ESI学科分类 | PHYSICS
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:8
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/27479 |
专题 | 量子科学与工程研究院 理学院_物理系 |
作者单位 | 1.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Technol, Shenzhen 518055, Peoples R China 2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China 3.Shenzhen Key Lab Quantum Sci & Engn, Shenzhen 518055, Peoples R China 4.Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China 5.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China |
第一作者单位 | 量子科学与工程研究院; 物理系 |
通讯作者单位 | 量子科学与工程研究院; 物理系 |
第一作者的第一单位 | 量子科学与工程研究院 |
推荐引用方式 GB/T 7714 |
Chen, Yiyuan,Lu, Hai-Zhou,Xie, X. C.. Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators[J]. PHYSICAL REVIEW LETTERS,2018,121(3).
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APA |
Chen, Yiyuan,Lu, Hai-Zhou,&Xie, X. C..(2018).Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators.PHYSICAL REVIEW LETTERS,121(3).
|
MLA |
Chen, Yiyuan,et al."Forbidden Backscattering and Resistance Dip in the Quantum Limit as a Signature for Topological Insulators".PHYSICAL REVIEW LETTERS 121.3(2018).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Chen-2018-Forbidden (445KB) | -- | -- | 限制开放 | -- |
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