Enhancing the Performance of Quantum-Dot Light-Emitting Diodes by Postmetallization Annealing

Su, Qiang; Zhang, Heng; Sun, Yizhe; Sun, Xiao Wei; Chen, Shuming

2018-07-11

10.1021/acsami.8b08470

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

The effect of postannealing on the device characteristics is systematically investigated. The external quantum efficiency (EQE) of blue quantum-dot light-emitting diodes (QLEDs) is significantly improved from 5.22 to 9.81% after postannealing. Similar results are obtained in green and red QLEDs, whose EQEs are enhanced from 11.47 and 13.60 to 15.57 and 16.59%, respectively. The annealed devices also exhibit a larger current density. The origin of efficiency improvement is thoroughly investigated. Our finding indicates that postannealing promotes the interfacial reaction of Al and ZnMgO and consequently leads to the metallization of the AlZnMgO contact and the formation of the AlOx interlayer. Because of the metallization of AlZnMgO, the contact resistance is effectively reduced, and thus the electron injection is enhanced. On the other hand, the formation of the AlOx interlayer can effectively suppress the quenching of excitons by the metal electrode. Because of the enhancement of electron injection and suppression of exciton quenching, the annealed blue, green, and red QLEDs exhibit a 1.9-, a 1.3-, and a 1.2-fold efficiency improvement, respectively. We envision the results offer a simple yet effective method to enhance the charge injection and the efficiency of QLED devices, which would promote the practical application of QLEDs.

equantum-dots light-emitting diodes post-annealing interlayer exciton quenching

SCI ; EI

英语

第一 ; 通讯

National Key R&D Program of China[2016YFB0401702]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000439007700037

AMER CHEMICAL SOC

20182605368402

Annealing ; Diodes ; Efficiency ; Electron injection ; Excitons ; Light emitting diodes ; Magnesium compounds ; Metallizing ; Nanocrystals ; Organic light emitting diodes (OLED) ; Quenching ; Semiconductor quantum dots ; Zinc compounds

Heat Treatment Processes:537.1 ; Metal Plating:539.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Production Engineering:913.1 ; Quantum Theory; Quantum Mechanics:931.4

Web of Science

Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Su, Qiang,Zhang, Heng,Sun, Yizhe,et al. Enhancing the Performance of Quantum-Dot Light-Emitting Diodes by Postmetallization Annealing[J]. ACS Applied Materials & Interfaces,2018,10(27):23218-23224.

Su, Qiang,Zhang, Heng,Sun, Yizhe,Sun, Xiao Wei,&Chen, Shuming.(2018).Enhancing the Performance of Quantum-Dot Light-Emitting Diodes by Postmetallization Annealing.ACS Applied Materials & Interfaces,10(27),23218-23224.

Su, Qiang,et al."Enhancing the Performance of Quantum-Dot Light-Emitting Diodes by Postmetallization Annealing".ACS Applied Materials & Interfaces 10.27(2018):23218-23224.