Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions

Wang, Xiao-Yu1; Wang, Hui-Juan2; Xiang, Bo3; Fu, Liang-Wei4; Zhu, Hao5; Chai, Dong1; Zhu, Bin1; Yu, Yuan1,6; Gao, Na1; Huang, Zhong-Yue1; Zu, Fang-Qiu1

2018-07-11

10.1021/acsami.8b01719

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

1944-8252

Interface engineering has been demonstrated to be an effective strategy for enhancing the thermoelectric (TE) performance of materials. However, a very typical interface in semiconductors, that is, the PN junction (PNJ), is scarcely adopted by the thermoelectrical community because of the coexistence of holes and electrons. Interestingly, our explorative results provide a definitively positive case that appropriate PNJs are able to enhance the TE performance of p-type Sb2Te3-based alloys. Specifically, owing to the formation of the charge-depletion layer and built-in electric field, the carrier concentration and transport can be optimized and thus the power factor is improved and the electronic thermal conductivity is decreased. Meanwhile, PNJs provide scattering centers for phonons, leading to a reduced lattice thermal conductivity. Consequently, the p-type (Bi2Te3)(0.15)-(Sb2Te3)(0.85) composites comprising PNJs achieve a similar to 131% improvement of the ZT value compared with the pure Sb2Te3. The increased ZT demonstrates the feasibility of improving the TE properties by introducing PNJs, which will open a new and effective avenue for designing TE alloys with high performance.

thermoelectric material interface engineering PN junction p-type Sb2Te3 thermoelectric performance

SCI ; EI

英语

其他

Natural Science Foundation of Anhui Province[1808085ME108]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000439007700044

AMER CHEMICAL SOC

20182605368466

Bismuth compounds ; Carrier concentration ; Electric fields ; Heterojunction bipolar transistors ; Interfaces (materials) ; Semiconductor junctions ; Thermoelectricity

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Materials Science:951

Web of Science

1.Hefei Univ Technol, Liquid Solid Met Proc Inst, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China
2.Univ Sci & Technol China, Expt Ctr Engn & Mat Sci, Hefei 230027, Anhui, Peoples R China
3.Key Lab Adv Funct Mat & Devices Anhui Prov, Hefei 230009, Anhui, Peoples R China
4.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
5.Univ Sci & Technol China, Sch Chem & Mat Sci, Dept Chem, Hefei 230026, Anhui, Peoples R China
6.Rhein Westfal TH Aachen, Phys Inst IA 1, D-52074 Aachen, Germany

Wang, Xiao-Yu,Wang, Hui-Juan,Xiang, Bo,et al. Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions[J]. ACS Applied Materials & Interfaces,2018,10(27):23277-23284.

Wang, Xiao-Yu.,Wang, Hui-Juan.,Xiang, Bo.,Fu, Liang-Wei.,Zhu, Hao.,...&Zu, Fang-Qiu.(2018).Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions.ACS Applied Materials & Interfaces,10(27),23277-23284.

Wang, Xiao-Yu,et al."Thermoelectric Performance of Sb2Te3-Based Alloys is Improved by Introducing PN Junctions".ACS Applied Materials & Interfaces 10.27(2018):23277-23284.