Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach

Li, Shuankui1; Liu, Yidong1; Liu, Fusheng2,3; He, Dongsheng4; He, Jiaqing4; Luo, Jun5; Xiao, Yinguo1; Pan, Feng1

2018-07

10.1016/j.nanoen.2018.04.047

Nano Energy   影响因子和分区

2211-2855

2211-3282

Grain boundaries play a critical role in the carrier/phonon transport in thermoelectric materials. It remains a big challenge to control over both chemical composition and dimension of grain boundary precisely by traditional approaches. Herein, an bottom-up grain boundary engineering strategy based on atomic layer deposition (ALD) is first introduced to atomically control and modify the grain boundary of Bi2Te3-based thermoelectric materials. To demonstrate the effect of this strategy, ultrathin ZnO interlayer is deposited on the Bi2Te2.7Se0.3 (BTS) grain boundaries to optimize of the carrier/phonon transport for achieving high thermoelectric performance. In situ TEM experiments upon heating reveals that the ZnO interlayer will give rise to the precipitation of Te nanodot at ZnO/BTS interface, which can be atomically controlled by adjusting the thickness of ZnO layer. Benefited from the atomically precise modified grain boundary, a maximum ZT of 0.85 is obtained, approximately 1.8 times higher than that of the pure BTS. As a powerful interfacial modification strategy, ALD-based approach can be extended to other thermoelectric material system simply, which may contribute to the development of high performance thermoelectric material of great significance.

Thermoelectric Bi2Te3 Atomic-Layer-Deposition Nanocomposites Energy filtering

SCI ; EI

英语

其他

National Natural Science Foundation of China[51602143]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000434829500031

ELSEVIER SCIENCE BV

20181805131692

Atoms ; Bismuth compounds ; Grain boundaries ; II-VI semiconductors ; Nanocomposites ; Selenium compounds ; Thermoelectric equipment ; Thermoelectricity ; Zinc oxide

Thermoelectric Energy:615.4 ; Electricity: Basic Concepts and Phenomena:701.1 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Crystal Growth:933.1.2

Web of Science

1.Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China
2.Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China
3.Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China
4.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
5.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

Li, Shuankui,Liu, Yidong,Liu, Fusheng,et al. Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach[J]. Nano Energy,2018,49:257-266.

Li, Shuankui.,Liu, Yidong.,Liu, Fusheng.,He, Dongsheng.,He, Jiaqing.,...&Pan, Feng.(2018).Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach.Nano Energy,49,257-266.

Li, Shuankui,et al."Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach".Nano Energy 49(2018):257-266.