题名 | Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires |
作者 | |
通讯作者 | Pantelides, Sokrates T. |
发表日期 | 2018-07
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DOI | |
发表期刊 | |
ISSN | 2053-1583
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卷号 | 5期号:3 |
摘要 | While the exfoliation of almost all layered materials results in a monolayer with the same atomic geometry as its bulk counterpart, the exfoliation of PdSe2 results in a monolayer with a different atomic geometry and a new stoichiometry, Pd2Se3, which is a fusion of two PdSe2 monolayers mediated by Se emission. Here we first report first-principles calculations of lateral junctions between a PdSe2 bilayer and a Pd2Se3 monolayer. We find that, while several distinct junction geometries are possible, they all exhibit empty interface states below the conduction band. As a result, light n-type doping of either or both sides, e.g. by halogen atoms replacing Se atoms, leads to a remotely-doped interface, i.e. a 1D conducting nanowire that runs along the junction, in between the two semiconductors. We have fabricated such junctions inside a scanning transmission electron microscope (STEM), but doping and transport measurements are not currently practical. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | Japan Society for the Promotion of Science (JSPS) KAKENHI[JP16H06333]
; Japan Society for the Promotion of Science (JSPS) KAKENHI[P16823]
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WOS研究方向 | Materials Science
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WOS类目 | Materials Science, Multidisciplinary
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WOS记录号 | WOS:000433935100001
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出版者 | |
EI入藏号 | 20182905568980
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EI主题词 | Atoms
; Calculations
; Geometry
; Interface states
; Monolayers
; Nanowires
; Semiconductor doping
; Semiconductor junctions
; Transmission electron microscopy
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EI分类号 | Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Mathematics:921
; Classical Physics; Quantum Theory; Relativity:931
; Atomic and Molecular Physics:931.3
; High Energy Physics; Nuclear Physics; Plasma Physics:932
; Solid State Physics:933
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:18
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/27573 |
专题 | 理学院_物理系 |
作者单位 | 1.Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA 2.Natl Inst Adv Ind Sci & Technol, AIST Cent 5, Tsukuba, Ibaraki 3058565, Japan 3.Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan 4.Vanderbilt Univ, Dept Elect Engn & Comp Sci, 221 Kirkland Hall, Nashville, TN 37235 USA 5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China |
推荐引用方式 GB/T 7714 |
Zuluaga, Sebastian,Lin, Junhao,Suenaga, Kazu,et al. Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires[J]. 2D Materials,2018,5(3).
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APA |
Zuluaga, Sebastian,Lin, Junhao,Suenaga, Kazu,&Pantelides, Sokrates T..(2018).Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires.2D Materials,5(3).
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MLA |
Zuluaga, Sebastian,et al."Two-dimensional PdSe2-Pd2Se3 junctions can serve as nanowires".2D Materials 5.3(2018).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Zuluaga-2018-Two-dim(2533KB) | -- | -- | 限制开放 | -- |
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