Pressure-induced structural and electronic transitions, metallization, and enhanced visible-light responsiveness in layered rhenium disulphide

Wang, Pei1,2; Wang, Yonggang3; Qu, Jingyu1,4; Zhu, Qiang1; Yang, Wenge3; Zhu, Jinlong1,3; Wang, Liping1; Zhang, Weiwei4; He, Duanwei2; Zhao, Yusheng1,5

2018-06-07

10.1103/PhysRevB.97.235202

PHYSICAL REVIEW B   影响因子和分区

2469-9950

2469-9969

Triclinic rhenium disulphide (ReS2) is a promising candidate for postsilicon electronics because of its unique optic-electronic properties. The electrical and optical properties of ReS2 under high pressure, however, remain unclear. Here we present a joint experimental and theoretical study on the structure, electronic, and vibrational properties, and visible-light responses of ReS2 up to 50 GPa. There is a direct-to-indirect band-gap transition in 1T-ReS2 under low-pressure regime up to 5 GPa. Upon further compression, 1T-ReS2 undergoes a structural transition to distorted-1T' phase at 7.7 GPa, followed by the isostructural metallization at 38.5 GPa. Both in situ Raman spectrum and electronic structure analysis reveal that interlayer sulfur-sulfur interaction is greatly enhanced during compression, leading to the remarkable modifications on the electronic properties observed in our subsequent experimental measurements, such as band-gap closure and enhanced photoresponsiveness. This study demonstrates the critical role of pressure in tuning materials properties and the potential usage of layered ReS2 for pressure-responsive optoelectronic applications.

SCI ; EI

英语

其他

Center for Functional Nanomaterials[DE-AC02-98CH10086]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000434396100004

AMER PHYSICAL SOC

20191906875541

Electronic properties ; Electronic structure ; Energy gap ; Light ; Materials properties ; Metallizing ; Optical properties ; Rhenium compounds ; Structural properties ; Sulfur

Structural Design:408 ; Metal Plating:539.3 ; Light/Optics:741.1 ; Chemical Products Generally:804 ; Materials Science:951

PHYSICS

Web of Science

1.Univ Nevada, High Pressure Sci & Engn Ctr, Las Vegas, NV 89154 USA
2.Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Sichuan, Peoples R China
3.Ctr High Pressure Sci & Technol Adv Res HPSTAR, Beijing 100094, Peoples R China
4.China Agr Univ, Dept Appl Phys, Beijing 100080, Peoples R China
5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

Wang, Pei,Wang, Yonggang,Qu, Jingyu,et al. Pressure-induced structural and electronic transitions, metallization, and enhanced visible-light responsiveness in layered rhenium disulphide[J]. PHYSICAL REVIEW B,2018,97(23).

Wang, Pei.,Wang, Yonggang.,Qu, Jingyu.,Zhu, Qiang.,Yang, Wenge.,...&Zhao, Yusheng.(2018).Pressure-induced structural and electronic transitions, metallization, and enhanced visible-light responsiveness in layered rhenium disulphide.PHYSICAL REVIEW B,97(23).

Wang, Pei,et al."Pressure-induced structural and electronic transitions, metallization, and enhanced visible-light responsiveness in layered rhenium disulphide".PHYSICAL REVIEW B 97.23(2018).