High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer

Sun, Yizhe1,2; Wang, Weigao2; Zhang, Heng2; Su, Qiang2; Wei, Jiangliu4; Liu, Pai3,4; Chen, Shuming2; Zhang, Shengdong1

2018-06-06

10.1021/acsami.8b04754

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

ZnO nanoparticles (NPs) are widely used as the electron transport layer (ETL) in quantum dot light-emitting diodes (QLEDs) owing to their suitable electrical properties. However, because of the well-aligned conduction band levels, electrons in QDs can be spontaneously transferred to adjacent ZnO NPs, leading to severe exciton dissociation, which reduces the proportion of radiative recombination and deteriorates the device efficiency. In this work, Al-doped ZnO NPs are thoroughly investigated as a replacement of ZnO for QLEDs. The energy band structures of Al-doped ZnO are modified by adjusting the concentration of Al dopants. With the increasing Al content, the work function and the conduction band edge of ZnO are gradually raised, and thus the charge transfer at the interface of QDs/ETL is effectively suppressed. Consequently, the green QLEDs with 10% Al-doped ZnO NPs exhibit maximum current efficiency and external quantum efficiency of 59.7 cd/A and 14.1%, which are about 1.8-fold higher than 33.3 cd/A and 7.9% of the devices with undoped ZnO NPs. Our work suggests that Al-doped ZnO NPs can serve as a good electron transport/injection material in QLEDs and other optoelectronic devices.

QLEDs electron transport layer metal oxide Al-doped ZnO nanoparticles charge transfer

SCI ; EI

英语

第一 ; 通讯

Guangdong Provincial Science and Technology Project[2016B090906001]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000434895500052

AMER CHEMICAL SOC

20182005210630

Aluminum ; Charge transfer ; Conduction bands ; Doping (additives) ; Electron transport properties ; II-VI semiconductors ; Metal nanoparticles ; Nanocrystals ; Optoelectronic devices ; Quantum chemistry ; Quantum efficiency ; Semiconductor quantum dots ; Zinc oxide ; ZnO nanoparticles

Aluminum:541.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Quantum Theory; Quantum Mechanics:931.4 ; High Energy Physics:932.1

Web of Science

1.Southern Univ Sci & Technol, Inst Microelect, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
3.South China Univ Technol, Inst Polymer Optoelect Mat & Devices, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China
4.Guangdong Poly Optoelect Co Ltd, Jiangmen 529040, Peoples R China

Sun, Yizhe,Wang, Weigao,Zhang, Heng,et al. High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer[J]. ACS Applied Materials & Interfaces,2018,10(22):18902-18909.

Sun, Yizhe.,Wang, Weigao.,Zhang, Heng.,Su, Qiang.,Wei, Jiangliu.,...&Zhang, Shengdong.(2018).High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer.ACS Applied Materials & Interfaces,10(22),18902-18909.

Sun, Yizhe,et al."High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer".ACS Applied Materials & Interfaces 10.22(2018):18902-18909.