Self-compensation induced vacancies for significant phonon scattering in InSb

Mao, Jun1,2,3; Niedziela, Jennifer L.4; Wang, Yumei5; Xia, Yi6; Ge, Binghui5; Liu, Zihang1,2; Zhou, Jiawei7; Ren, Zhensong1,2; Liu, Weishu8; Chan, Maria K. Y.6; Chen, Gang7; Delaire, Olivier4,9; Zhang, Qian10; Ren, Zhifeng1,2

2018-06

10.1016/j.nanoen.2018.03.058

Nano Energy   影响因子和分区

2211-2855

2211-3282

Phonon scattering by point defects via mass differences and strain fluctuations could effectively reduce the lattice thermal conductivity. The atomic mass difference can be maximized by introducing the vacancies thus leading to a significant phonon scattering. Usually, the vacancies are introduced by tuning the stoichiometry or forming solid solution with certain compound that contains intrinsically high concentration of vacancies. In this work, we demonstrate that vacancies can be effectively induced by the self-compensation effect via chemical doping. Indium (In) vacancies in InSb were induced by Te-doping and a substantial reduction in thermal conductivity was observed. Room temperature lattice thermal conductivity of the melted and then hot-pressed InSb (without In vacancies) is similar to 14.5Wm(-1) K-1 but only similar to 3.8Wm(-)1 K-1 for InSb0.96Te0.04 (with In vacancies), a reduction of similar to 74%. The advantage of using this strategy for phonon engineering lies in the fact that a substantial reduction in thermal conductivity can be achieved even when the dopant concentration is rather low. Since the self-compensation effect is widely observed in different compounds, it indicates that the vacancy engineering strategy used here is also applicable to a variety of other materials to effectively reduce the lattice thermal conductivity.

Self-compensation effect Vacancy Phonon engineering Point-defect scattering Thermal conductivity InSb

SCI ; EI

英语

其他

U.S. Department of Energy, Office of Science[DE-AC02-06CH11357]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000432604600022

ELSEVIER SCIENCE BV

20181404969766

Antimony compounds ; Crystal lattices ; III-V semiconductors ; Indium antimonides ; Phonon scattering ; Phonons ; Point defects ; Strain ; Tellurium compounds ; Thermal Engineering ; Vacancies

Thermodynamics:641.1 ; Chemical Products Generally:804 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1 ; Materials Science:951

Web of Science

1.Univ Houston, Dept Phys, Houston, TX 77204 USA
2.Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
3.Univ Houston, Dept Mech Engn, Houston, TX 77204 USA
4.Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA
5.Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, POB 603, Beijing 100190, Peoples R China
6.Argonne Natl Lab, Ctr Nanoscale Mat, 9700 S Cass Ave, Argonne, IL 60439 USA
7.MIT, Dept Mech Engn, Cambridge, MA 02139 USA
8.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
9.Duke Univ, Dept Mech Engn & Mat Sci, Durham, NC 27708 USA
10.Harbin Inst Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China

Mao, Jun,Niedziela, Jennifer L.,Wang, Yumei,et al. Self-compensation induced vacancies for significant phonon scattering in InSb[J]. Nano Energy,2018,48:189-196.

Mao, Jun.,Niedziela, Jennifer L..,Wang, Yumei.,Xia, Yi.,Ge, Binghui.,...&Ren, Zhifeng.(2018).Self-compensation induced vacancies for significant phonon scattering in InSb.Nano Energy,48,189-196.

Mao, Jun,et al."Self-compensation induced vacancies for significant phonon scattering in InSb".Nano Energy 48(2018):189-196.