南方科技大学知识苑(SUSTech KC): Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT

题名	Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT
作者	Qi, Yongle 1,2 ; Zhu, Yumeng 1,2; Zhang, Jiang 3; Lin, Xinpeng1,2 ; Cheng, Kai 4; Jiang, Lingli1,2 ; Yu, Hongyu1,2
通讯作者	Yu, Hongyu
发表日期	2018-05
DOI	10.1109/TED.2018.2813985
发表期刊	IEEE Transactions on Electron Devices 影响因子和分区
ISSN	1557-9646
卷号	65 期号:5页码:1759-1764
关键词	Constant-voltage stress (CVS) gallium nitride (GaN) metal–insulator–semiconductor high-electron mobility transistor (MIS-HEMT) time-dependent dielectric breakdown (TDDB)
相关链接	[IEEE记录]
收录类别	SCI ; EI
学校署名	第一 ; 通讯
EI入藏号	20181805117600
EI主题词	Wide band gap semiconductors ; Electron mobility ; III-V semiconductors ; Electric breakdown ; Gate dielectrics ; Outages ; Semiconductor insulator boundaries ; Aluminum gallium nitride ; Silicon wafers ; Dielectric materials ; Metal insulator boundaries ; Semiconducting gallium compounds ; Substrates ; High electron mobility transistors ; MIS devices
EI分类号	Electricity: Basic Concepts and Phenomena:701.1 ; Electric Power Systems:706.1 ; Dielectric Materials:708.1 ; Semiconducting Materials:712.1 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2
ESI学科分类	ENGINEERING
来源库	IEEE
全文链接	https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8330030
引用统计	被引频次[WOS]：24
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/27758
专题	南方科技大学工学院_深港微电子学院
作者单位	1.Southern Univ Sci & Technol, Shenzhen 518055, Peoples R China 2.Shenzhen Key Lab Third Generat Semicond, Shenzhen 518055, Peoples R China 3.Fudan Univ, Sch Microelect, Suzhou 215028, Jiangsu, Peoples R China 4.Enkris Semicond, Suzhou 215028, Peoples R China
第一作者单位	南方科技大学
通讯作者单位	南方科技大学
第一作者的第一单位	南方科技大学
推荐引用方式 GB/T 7714	Qi, Yongle,Zhu, Yumeng,Zhang, Jiang,et al. Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT[J]. IEEE Transactions on Electron Devices,2018,65(5):1759-1764.
APA	Qi, Yongle.,Zhu, Yumeng.,Zhang, Jiang.,Lin, Xinpeng.,Cheng, Kai.,...&Yu, Hongyu.(2018).Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT.IEEE Transactions on Electron Devices,65(5),1759-1764.
MLA	Qi, Yongle,et al."Evaluation of LPCVD SiNx Gate Dielectric Reliability by TDDB Measurement in Si-Substrate-Based AlGaN/GaN MIS-HEMT".IEEE Transactions on Electron Devices 65.5(2018):1759-1764.