Optical properties improvement of GaSb epilayers through defects compensation via doping

Wang, Dengkui1; Liu, Xue1; Tang, Jilong1; Fang, Xuan1; Fang, Dan1; Li, Jinhua1; Wang, Xiaohua1; Chen, Rui2; Wei, Zhipeng1

2018-05

10.1016/j.jlumin.2018.01.050

JOURNAL OF LUMINESCENCE   影响因子和分区

0022-2313

1872-7883

The optical properties of GaSb strongly depend on the defect types and concentration. Doping is an effective method to improve the optical properties by changing the native defect types and concentration. In this paper, the native defects related emissions were suppressed through defects compensation via Be-doping. The un-doped and Be-doped GaSb were fabricated by molecular beam epitaxy. Temperature-and excitation power-dependent photoluminescence were applied to investigate optical properties of GaSb epilayer. The Ga vacancy related emission disappeared after Be doping. This phenomenon can be explained by the defect compensation between Be atoms and Ga vacancy, which greatly reduced the concentration of native defects. To certify this theory, Te-doped GaSb was prepared. For Te-doped GaSb, Te-Sb recombined with native defects and formed new complex defects, which enhanced the defects related emission peak. The investigation of optical properties of doped GaSb epilayer was great significant for practical application of GaSb-based devices.

Be-doped GaSb Defects compensation Photoluminescence

SCI ; EI

英语

其他

Innovation Foundation of Changchun University of Science and Technology[XJJLG-2016-11] ; Innovation Foundation of Changchun University of Science and Technology[XJJLG-2016-14]

Optics

Optics

WOS:000425996400038

ELSEVIER SCIENCE BV

20180704782506

Beryllium compounds ; Defects ; Epilayers ; Gallium ; Gallium compounds ; III-V semiconductors ; Molecular beam epitaxy ; Optical properties ; Photoluminescence ; Tellurium compounds

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Light/Optics:741.1 ; Atomic and Molecular Physics:931.3 ; Materials Science:951

PHYSICS

Web of Science

1.Changchun Univ Sci & Technol, State Key Lab High Power Semicond Laser, 7089 Wei Xing Rd, Changchun 130022, Jilin, Peoples R China
2.South Univ Sci & Technol China, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China

Wang, Dengkui,Liu, Xue,Tang, Jilong,et al. Optical properties improvement of GaSb epilayers through defects compensation via doping[J]. JOURNAL OF LUMINESCENCE,2018,197:266-269.

Wang, Dengkui.,Liu, Xue.,Tang, Jilong.,Fang, Xuan.,Fang, Dan.,...&Wei, Zhipeng.(2018).Optical properties improvement of GaSb epilayers through defects compensation via doping.JOURNAL OF LUMINESCENCE,197,266-269.

Wang, Dengkui,et al."Optical properties improvement of GaSb epilayers through defects compensation via doping".JOURNAL OF LUMINESCENCE 197(2018):266-269.