Bandgap Engineering of InSe Single Crystals through S Substitution

Li, Hui1; Han, Xu1; Pan, Ding1,2,3; Yan, Xin1; Wang, Huan-Wen1; Wu, Changming1; Cheng, Guanghui1; Zhang, Huachen1; Yang, Shuo1; Li, Baikui1,4; He, Hongtao5; Wang, Jiannong1

2018-05

10.1021/acs.cgd.7b01751

CRYSTAL GROWTH & DESIGN   影响因子和分区

1528-7483

1528-7505

Bandgap engineering offers opportunities for tailoring the properties of semiconductor materials for desired applications in microelectronics and optoelectronics. Alloys of different semiconductor materials can lead to the continuously tuning of the bandgap. Here, we report the bandgap engineering in layered InSe single crystals by substituting the Se atoms with S atoms. The formation of InSxSe1-x single crystal alloy with x <= 0.3 is evidenced by the X-ray diffraction and resonant Raman spectra. The photoluminescence (PL) spectra peak position blue shifts from similar to 1.27 to similar to 1.42 eV as S composition increases from 0 to 0.3 in the alloys, which is consistent with the bandgap shifts calculated by density functional theory. Temperature dependence of the PL spectra indicate that the presence of S atoms decreases the strength of the electron-phonon interaction but increases the average phonon energy in InSxSe1-x, alloys. Our findings will open an intriguing avenue in understanding the fundamental physics in the III-VI layered semiconductor materials and their potential applications in optoelectronic devices.

SCI ; EI

英语

其他

Natural Science Foundation of Guangdong Province[2015A030313840]

Chemistry ; Crystallography ; Materials Science

Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary

WOS:000431599100028

AMER CHEMICAL SOC

20181905140471

Atoms ; Chromium compounds ; Density functional theory ; Electron-phonon interactions ; Energy gap ; Indium alloys ; Layered semiconductors ; Microelectronics ; Optoelectronic devices ; Semiconductor devices ; Temperature distribution ; X ray diffraction

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Thermodynamics:641.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1

CHEMISTRY

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Clear Water Bay, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Dept Chem, Clear Water Bay, Hong Kong, Peoples R China
3.HKUST Fok Ying Tung Res Inst, Guangzhou, Guangdong, Peoples R China
4.Shenzhen Univ, Coll Optoelect Engn, Shenzhen 518060, Guangdong, Peoples R China
5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China

Li, Hui,Han, Xu,Pan, Ding,et al. Bandgap Engineering of InSe Single Crystals through S Substitution[J]. CRYSTAL GROWTH & DESIGN,2018,18(5):2899-2904.

Li, Hui.,Han, Xu.,Pan, Ding.,Yan, Xin.,Wang, Huan-Wen.,...&Wang, Jiannong.(2018).Bandgap Engineering of InSe Single Crystals through S Substitution.CRYSTAL GROWTH & DESIGN,18(5),2899-2904.

Li, Hui,et al."Bandgap Engineering of InSe Single Crystals through S Substitution".CRYSTAL GROWTH & DESIGN 18.5(2018):2899-2904.