Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3

Zhang, Jiaye1; Han, Shaobo2; Luo, Weihuang1; Xiang, Shuhuai2; Zou, Jianli2; Oropeza, Freddy E.3; Gu, Meng2; Zhang, Kelvin H. L.1,4

2018-04-23

10.1063/1.5029422

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

Transparent oxide semiconductors hold great promise for many optoelectronic devices such as transparent electronics, UV-emitting devices, and photodetectors. A p-n heterojunction is the most ubiquitous building block to realize these devices. In this work, we report the fabrication and characterization of the interface properties of a transparent heterojunction consisting of p-type NiO and n-type perovskite BaSnO3. We show that high-quality NiO thin films can be epitaxially grown on BaSnO3 with sharp interfaces because of a small lattice mismatch (similar to 1.3%). The diode fabricated from this heterojunction exhibits rectifying behavior with a ratio of 500. X-ray photoelectron spectroscopy reveals a type II or "staggered" band alignment with valence and conduction band offsets of 1.44 eV and 1.86 eV, respectively. Moreover, a large upward band bending potential of 0.90 eV for BaSnO3 and a downward band bending potential of 0.15 eV for NiO were observed in the interface region. Such electronic properties have important implication for optoelectronic applications as the large built-in potential provides favorable energetics for photo-generated electron-hole separation/migration. Published by AIP Publishing.

SCI ; EI

英语

NI期刊

其他

University of Cambridge[]

Physics

Physics, Applied

WOS:000431072800017

AMER INST PHYSICS

20181805114705

Barium compounds ; Electronic properties ; Heterojunctions ; Interfaces (materials) ; Lattice mismatch ; Nickel oxide ; Optoelectronic devices ; Oxide semiconductors ; Perovskite ; X ray photoelectron spectroscopy

Minerals:482.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Optical Devices and Systems:741.3 ; Inorganic Compounds:804.2 ; Crystal Lattice:933.1.1 ; Materials Science:951

PHYSICS

Web of Science

1.Xiamen Univ, Coll Chem & Chem Engn, Xiamen 361005, Peoples R China
2.Southern Univ Sci & Technol, Dept Mat Sci & Engn, 1088 Xueyuan Blvd, Shenzhen 518055, Guangdong, Peoples R China
3.Tech Univ Eindhoven, Dept Chem Engn & Chem, NL-5600 MB Eindhoven, Netherlands
4.Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England

Zhang, Jiaye,Han, Shaobo,Luo, Weihuang,et al. Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3[J]. APPLIED PHYSICS LETTERS,2018,112(17).

Zhang, Jiaye.,Han, Shaobo.,Luo, Weihuang.,Xiang, Shuhuai.,Zou, Jianli.,...&Zhang, Kelvin H. L..(2018).Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3.APPLIED PHYSICS LETTERS,112(17).

Zhang, Jiaye,et al."Interface energy band alignment at the all-transparent p-n heterojunction based on NiO and BaSnO3".APPLIED PHYSICS LETTERS 112.17(2018).