Breaking the current density threshold in spin-orbit-torque magnetic random access memory

Zhang, Yin1,2; Yuan, H. Y.3; Wang, X. S.1,4; Wang, X. R.1,2

2018-04-20

10.1103/PhysRevB.97.144416

PHYSICAL REVIEW B   影响因子和分区

2469-9950

2469-9969

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 10(5) A/cm(2) and 10(6) A/cm(2) far below 10(7) A/cm(2) and 10(8) A/cm(2) in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

SCI ; EI

英语

通讯

Hong Kong RGC[16300117] ; Hong Kong RGC[16301816]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000430459100003

AMER PHYSICAL SOC

20191906874853

Cobalt compounds ; Current density ; Equations of motion ; Magnetic storage ; Magnetization reversal ; MRAM devices ; Virtual storage

Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Data Storage, Equipment and Techniques:722.1 ; Calculus:921.2

PHYSICS

Web of Science

1.Hong Kong Univ Sci & Technol, Phys Dept, Kowloon, Hong Kong, Peoples R China
2.HKUST Shenzhen Res Inst, Shenzhen 518057, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Sichuan, Peoples R China

Zhang, Yin,Yuan, H. Y.,Wang, X. S.,et al. Breaking the current density threshold in spin-orbit-torque magnetic random access memory[J]. PHYSICAL REVIEW B,2018,97(14).

Zhang, Yin,Yuan, H. Y.,Wang, X. S.,&Wang, X. R..(2018).Breaking the current density threshold in spin-orbit-torque magnetic random access memory.PHYSICAL REVIEW B,97(14).

Zhang, Yin,et al."Breaking the current density threshold in spin-orbit-torque magnetic random access memory".PHYSICAL REVIEW B 97.14(2018).