Highly In-Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide

Yang, Shengxue1; Yang, Yanhan2; Wu, Minghui3; Hu, Chunguang4; Shen, Wanfu4; Gong, Yongji1; Huang, Li3; Jiang, Chengbao1; Zhang, Yongzhe2; Ajayan, Pulickel M.5

2018-04-18

10.1002/adfm.201707379

ADVANCED FUNCTIONAL MATERIALS   影响因子和分区

1616-301X

1616-3028

Anisotropic 2D materials exhibit unique optical, electrical, and thermoelectric properties that open up possibilities for diverse angle-dependent devices. However, the explored anisotropic 2D materials are very limited and the methods to identify the crystal orientations and to study the in-plane anisotropy are in the initial stage. Here azimuth-dependent reflectance difference microscopy (ADRDM), angle-resolved Raman spectra, and electrical transport measurements are used to systematically characterize the influence of the anisotropic structure on in-plane optical and electrical anisotropy of 2D GeAs, a novel group IV-V semiconductor. It is proved that ADRDM offers a way to quickly identify the crystal orientations and also to directly characterize the in-plane optical anisotropy of layered GeAs. The anisotropic electrical transport behavior of few-layer GeAs field-effect transistors is further measured and the anisotropic ratio of the mobility is as high as 4.6, which is higher than the other 2D anisotropic materials such as black phosphorus. The dependence of the Raman intensity anisotropy on the sample thickness, excitation wavelength, and polarization configuration is investigated both experimentally and theoretically. These data will be useful for designing new high-performance devices and the results suggest a general methodology for characterizing the in-plane anisotropy of low-symmetry 2D materials.

electrical transport germanium arsenide in-plane anisotropy Raman spectra reflectance difference microscopy

SCI ; EI

英语

NI期刊

其他

National key research and development program[2017YFF0107003]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000430163700032

WILEY-V C H VERLAG GMBH

20180804814294

Arsenic compounds ; Crystal orientation ; Excited states ; Field effect transistors ; Germanium ; Germanium compounds ; Optical anisotropy ; Raman scattering ; Reflection

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Atomic and Molecular Physics:931.3 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

Web of Science

1.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
2.Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518005, Peoples R China
4.Tianjin Univ, State Key Lab Precis Measuring Technol & Instrume, Weijin Rd, CN-300072 Tianjin, Peoples R China
5.Rice Univ, Sch Mat Sci & Nano Engn, Houston, TX 77005 USA

Yang, Shengxue,Yang, Yanhan,Wu, Minghui,et al. Highly In-Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide[J]. ADVANCED FUNCTIONAL MATERIALS,2018,28(16).

Yang, Shengxue.,Yang, Yanhan.,Wu, Minghui.,Hu, Chunguang.,Shen, Wanfu.,...&Ajayan, Pulickel M..(2018).Highly In-Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide.ADVANCED FUNCTIONAL MATERIALS,28(16).

Yang, Shengxue,et al."Highly In-Plane Optical and Electrical Anisotropy of 2D Germanium Arsenide".ADVANCED FUNCTIONAL MATERIALS 28.16(2018).