2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy

Li, Liang1; Wang, Weike2; Gong, Penglai3; Zhu, Xiangde4; Deng, Bei3; Shi, Xingqiang3; Gao, Guoying5; Li, Huiqiao1; Zhai, Tianyou1,6,7

2018-04-05

10.1002/adma.201706771

ADVANCED MATERIALS   影响因子和分区

0935-9648

1521-4095

Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV-Group V compound 2D materials.

2D materials GeP in-plane anisotropy low-symmetry photodetectors

SCI ; EI

英语

NI期刊

其他

Natural Science Foundation of Guangdong Province of China[2017A030310661]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000429410300026

WILEY-V C H VERLAG GMBH

20180904842188

Anisotropy ; Dispersions ; Energy gap ; Photodetectors ; Photons

Physical Properties of Gases, Liquids and Solids:931.2 ; Atomic and Molecular Physics:931.3 ; Materials Science:951

MATERIALS SCIENCE

Web of Science

1.HUST, Sch Mat Sci & Engn, State Key Lab Mat Proc & & Mould Technol, Wuhan 430074, Hubei, Peoples R China
2.Hunan Normal Univ, Coll Phys & Informat Sci, Key Lab Low Dimens Quantum Struct & Quantum Contr, Minist Educ,Synerget Innovat Ctr Quantum Effects, Changsha 410081, Hunan, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Chinese Acad Sci, High Magnet Field Lab, Anhui Prov Key Lab Condensed Matter Phys Extreme, Hefei 230031, Anhui, Peoples R China
5.Huazhong Univ Sci & Technol, Sch Phys, Wuhan 430074, Hubei, Peoples R China
6.Tianjin Univ, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
7.Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China

Li, Liang,Wang, Weike,Gong, Penglai,et al. 2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy[J]. ADVANCED MATERIALS,2018,30(14).

Li, Liang.,Wang, Weike.,Gong, Penglai.,Zhu, Xiangde.,Deng, Bei.,...&Zhai, Tianyou.(2018).2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy.ADVANCED MATERIALS,30(14).

Li, Liang,et al."2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy".ADVANCED MATERIALS 30.14(2018).