Study of initiation and development of local oxidation phenomena during anodizing of SiC

Liu, Nian; Yi, Rong; Deng, Hui

2018-04

10.1016/j.elecom.2018.02.013

ELECTROCHEMISTRY COMMUNICATIONS   影响因子和分区

1388-2481

1873-1902

Even though anodizing has been proved to be a highly efficient oxidation approach of single crystal SiC, the oxidation mechanism is still unrevealed. In this work, the initiation and development of the local oxidation phenomenon during anodizing of SiC have been experimentally studied. Local oxidation occurred on the charge carrier-rich areas like damaged areas and doping sites. The oxidation of the damaged areas has a higher priority compared with that of doping sites during anodizing of SiC. For anodizing of damaged areas, the protrusions generated by local oxidation gathered around the damaged areas. In contrast, protrusions were randomly distributed for anodizing of doping sites.

Single crystal SiC Anodic oxidation Subsurface damage Doping Protrusion

SCI ; EI

英语

第一 ; 通讯

Electrochemistry

Electrochemistry

WOS:000427695600007

ELSEVIER SCIENCE INC

20180904839810

Doping (additives) ; Silicon carbide ; Silicon compounds ; Single crystals

Protection Methods:539.2.1 ; Inorganic Compounds:804.2 ; Crystalline Solids:933.1

CHEMISTRY

Web of Science

Southern Univ Sci & Technol, Dept Mech & Energy Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China

Liu, Nian,Yi, Rong,Deng, Hui. Study of initiation and development of local oxidation phenomena during anodizing of SiC[J]. ELECTROCHEMISTRY COMMUNICATIONS,2018,89:27-31.

Liu, Nian,Yi, Rong,&Deng, Hui.(2018).Study of initiation and development of local oxidation phenomena during anodizing of SiC.ELECTROCHEMISTRY COMMUNICATIONS,89,27-31.

Liu, Nian,et al."Study of initiation and development of local oxidation phenomena during anodizing of SiC".ELECTROCHEMISTRY COMMUNICATIONS 89(2018):27-31.