High-efficiency all-inorganic full-colour quantum dot light-emitting diodes

Yang, Xuyong1; Zhang, Zi-Hui2; Ding, Tao3; Wang, Ning3; Chen, Guo1; Dang, Cuong3; Demir, Hilmi Volkan3; Sun, Xiao Wei4

2018-04

10.1016/j.nanoen.2018.02.002

Nano Energy   影响因子和分区

2211-2855

2211-3282

All-inorganic quantum dot light-emitting diodes (QLEDs) with excellent device stability have attracted significant attention for solid state lighting and flat panel display applications. However, the performance for the present all-inorganic QLEDs is far inferior to that of the well-developed QLEDs with organic charge transport layers. Our all-inorganic full-colour QLEDs show the maximum brightness and efficiency values of 21,600 cd/m(2) and 6.52%, respectively, which are record-breaking among the existing all-inorganic QLEDs. The outstanding performance is achieved by an efficient design of device architecture with solution-processed charge transport layers (CTLs). Meanwhile, the ultrathin double-sided insulating layers are inserted between the quantum dot emissive layer and their adjacent oxide electron transport layers to better balance charge injection in the device and reduce the quenching effects for inorganic CTLs on QD emission. This study is the first account for high-performance, all-inorganic QLEDs insightfully offering detailed investigations into the performance promotion for inorganic electroluminescent devices.

Electroluminescent devices Quantum dots Electroluminescence Light-emitting diodes Inorganic nanodevices

SCI ; EI

英语

通讯

Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning[TP2015037]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000427924000027

ELSEVIER SCIENCE BV

20180704782304

Diodes ; Efficiency ; Electroluminescence ; Electron transport properties ; Electrooptical devices ; Flat panel displays ; Light ; Light emitting diodes ; Luminance ; Luminescent devices ; Nanocrystals ; Optoelectronic devices ; Quantum chemistry ; Semiconductor quantum dots

Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741 ; Nanotechnology:761 ; Physical Chemistry:801.4 ; Production Engineering:913.1

Web of Science

1.Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China
2.Hebei Univ Technol, Sch Elect & Informat Engn, Inst Micronano Photoelectron & Electromagnet Tech, 5340 Xiping Rd, Tianjin 300401, Peoples R China
3.Nanyang Technol Univ, Sch Elect & Elect Engn, Sch Phys & Math Sci, Luminous Ctr Excellence Semicond Lighting & Displ, Nanyang Ave, Singapore 639798, Singapore
4.Southern Univ Sci & Technol, Dept Elect & Elect Engn, 1088 Xue Yuan Rd, Shenzhen 518055, Guangdong, Peoples R China

Yang, Xuyong,Zhang, Zi-Hui,Ding, Tao,et al. High-efficiency all-inorganic full-colour quantum dot light-emitting diodes[J]. Nano Energy,2018,46:229-233.

Yang, Xuyong.,Zhang, Zi-Hui.,Ding, Tao.,Wang, Ning.,Chen, Guo.,...&Sun, Xiao Wei.(2018).High-efficiency all-inorganic full-colour quantum dot light-emitting diodes.Nano Energy,46,229-233.

Yang, Xuyong,et al."High-efficiency all-inorganic full-colour quantum dot light-emitting diodes".Nano Energy 46(2018):229-233.