Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing

Deng, Hui1; Liu, Nian1; Endo, Katsuyoshi2; Yamamura, Kazuya2

2018-03-15

10.1016/j.apsusc.2017.10.159

APPLIED SURFACE SCIENCE   影响因子和分区

0169-4332

1873-5584

Single-crystal silicon carbide (4H-SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for fabrication of next-generation semiconductor devices. In this work, we report a hybrid polishing process combining thermal oxidation pretreatment and soft abrasive polishing to realize the damage-free and atomic-scale smooth finishing of the carbon face of 4H-SiC. By thermal oxidation pretreatment, the hardness of the carbon face has been reduced from 4.6 GPa to 1.7 GPa, which enables highly efficient polishing using CeO2 slurry. For conventional CeO2 slurry polishing without pretreatment, scratches still existed after a long polishing duration for 16 h. The probable scratch removal mechanism in CeO2 slurry polishing has been proposed based on surface morphology changes during polishing. Whereas a scratch-free surface with well-ordered SiC atomic steps was obtained within a short polishing duration of only 3 h when polishing was conducted on a thermally oxidized surface. Our results demonstrate that hybrid polishing combining surface pretreatment and soft abrasive polishing is a promising approach to realize the damage-free and atomic-scale smooth finishing of the carbon face of 4H-SiC. (C) 2017 Elsevier B.V. All rights reserved.

Silicon carbide Chemical mechanical polishing Thermal oxidation Atomic step Scratch-free

SCI ; EI

英语

第一 ; 通讯

[25-518 2013]

Chemistry ; Materials Science ; Physics

Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter

WOS:000419116600006

ELSEVIER SCIENCE BV

20174404322141

Abrasives ; Atoms ; Carbon ; Cerium oxide ; Chemical mechanical polishing ; Electronic properties ; Semiconductor devices ; Silicon carbide ; Silicon wafers ; Single crystals ; Thermooxidation ; Wide band gap semiconductors

Machining Operations:604.2 ; Abrasive Materials:606.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1

MATERIALS SCIENCE

Web of Science

1.Southern Univ Sci & Technol, Dept Mech & Energy Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China
2.Osaka Univ, Grad Sch Engn, Res Ctr Ultraprecis Sci & Technol, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan

Deng, Hui,Liu, Nian,Endo, Katsuyoshi,et al. Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing[J]. APPLIED SURFACE SCIENCE,2018,434:40-48.

Deng, Hui,Liu, Nian,Endo, Katsuyoshi,&Yamamura, Kazuya.(2018).Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing.APPLIED SURFACE SCIENCE,434,40-48.

Deng, Hui,et al."Atomic-scale finishing of carbon face of single crystal SiC by combination of thermal oxidation pretreatment and slurry polishing".APPLIED SURFACE SCIENCE 434(2018):40-48.