Full color quantum dot light-emitting diodes patterned by photolithography technology

Ji, Tingjing; Jin, Shuang; Zhang, Heng; Chen, Shuming; Sun, Xiao Wei

2018-03

10.1002/jsid.640

Journal of the Society for Information Display   影响因子和分区

1071-0922

1938-3657

Quantum dot light-emitting diodes are promising candidates for next generation displays. For display application, a pixel consists of red (R), green (G), and blue (B) side-by-side sub-pixels, which thereby requires a high resolution patterning of the light-emission layers. In this work, the quantum dot (QD) light-emitting layers are fine patterned by using the photolithography and the lift-off techniques. To facilitate the lift-off process, reverse photoresist AZ5214E is used because of its special inverted trapezoidal structure after developing. To prevent the QDs being washed off during the lift-off process, the ZnMgO layer is treated by the hydrophobic material hexamethyldisilazane. With hexamethyldisilazane treatment, the adhesion between the QDs and the ZnMgO is effectively improved. As a result, side-by-side R/G/B QD with pixel size of 30mx120m is successfully achieved. After patterning, the R, G, and B-quantum dot light-emitting diodes exhibit a maximum current efficiency of 11.6cd/A, 29.7cd/A, and 1.5cd/A, respectively. This work confirms the feasibility of patterning QDs by using the photolithography and the lift-off techniques.

quantum dots light-emitting diodes color patterning high resolution photolithography

SCI ; EI

英语

第一 ; 通讯

Shenzhen Peacock Plan[KQTD2015071710313656]

Engineering ; Materials Science ; Optics ; Physics

Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Optics ; Physics, Applied

WOS:000434142400001

WILEY

20181404974668

Diodes ; Light emitting diodes ; Magnesium compounds ; Nanocrystals ; Organic light emitting diodes (OLED) ; Photolithography ; Photoresists ; Pixels ; Zinc compounds

Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761

Web of Science

Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China

Ji, Tingjing,Jin, Shuang,Zhang, Heng,et al. Full color quantum dot light-emitting diodes patterned by photolithography technology[J]. Journal of the Society for Information Display,2018,26(3):121-127.

Ji, Tingjing,Jin, Shuang,Zhang, Heng,Chen, Shuming,&Sun, Xiao Wei.(2018).Full color quantum dot light-emitting diodes patterned by photolithography technology.Journal of the Society for Information Display,26(3),121-127.

Ji, Tingjing,et al."Full color quantum dot light-emitting diodes patterned by photolithography technology".Journal of the Society for Information Display 26.3(2018):121-127.