题名 | Fluorinated Head-to-Head Dialkoxybithiophene: A New Electron-Donating Building Block for High-Performance Polymer Semiconductors |
作者 | |
通讯作者 | Woo, Han Young; Guo, Xugang |
发表日期 | 2018-03
|
DOI | |
发表期刊 | |
ISSN | 2199-160X
|
卷号 | 4期号:3 |
摘要 | New building blocks with good solubility and optimized optoelectrical property are critical for materials development in organic electronics. Herein, a new head-to-head linkage containing a donor unit, 4,4'-difluoro-3,3'-dialkoxy-2,2'-bithiophene (BTfOR), is synthesized. The dialkoxy chains afford good materials solubility and also planar backbone via noncovalent (thienyl) S.(alkoxy) O interactions. Compared to the reported 3,3'-dialkoxy-2,2'-bithiophene (BTOR), F addition leads to BTfOR with lower-lying frontier molecular orbitals and can further promote polymer packing via additional F ... S or F ... H interactions. BTfOR can be readily stannylated to afford tin monomer with high purity and excellent reactivity toward Stille polymerization. As a proof of concept for materials design, BTfOR-based homopolymer (PBTfOR) is synthesized, showing high molecular weight and strong aggregation. Moreover, the HOMO (-4.98 eV) of PBTfOR is greatly lower than that (-4.54 eV) of nonfluorinated counterpart PBTOR, which is attributed to the addition of F atoms. When incorporated into thin-film transistors, PBTfOR exhibits a remarkable hole mobility of 0.57 cm(2) V-1 s(-1), showing an exceptional example of high-mobility head-to-head polythiophene. This study demonstrates that introduction of F atoms can lead to BTfOR with optimized physicochemical properties, and the new BTfOR should find promising use for constructing donor-acceptor copolymers for high-performance electronic devices. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | NRF of Korea[2016M1A2A2940911]
; NRF of Korea[20100020209]
|
WOS研究方向 | Science & Technology - Other Topics
; Materials Science
; Physics
|
WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
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WOS记录号 | WOS:000427002100009
|
出版者 | |
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:21
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/27959 |
专题 | 工学院_材料科学与工程系 |
作者单位 | 1.South Univ Sci & Technol China, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China 2.South Univ Sci & Technol China, Shenzhen Key Lab Printed Organ Elect, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China 3.Wuhan Univ, Dept Chem, Wuhan 430072, Hubei, Peoples R China 4.Korea Univ, Res Inst Nat Sci, Dept Chem, Seoul 136713, South Korea |
第一作者单位 | 材料科学与工程系; 南方科技大学 |
通讯作者单位 | 材料科学与工程系; 南方科技大学 |
第一作者的第一单位 | 材料科学与工程系 |
推荐引用方式 GB/T 7714 |
Huang, Jun,Guo, Han,Uddin, Mohammad Afsar,et al. Fluorinated Head-to-Head Dialkoxybithiophene: A New Electron-Donating Building Block for High-Performance Polymer Semiconductors[J]. Advanced Electronic Materials,2018,4(3).
|
APA |
Huang, Jun,Guo, Han,Uddin, Mohammad Afsar,Yu, Jianwei,Woo, Han Young,&Guo, Xugang.(2018).Fluorinated Head-to-Head Dialkoxybithiophene: A New Electron-Donating Building Block for High-Performance Polymer Semiconductors.Advanced Electronic Materials,4(3).
|
MLA |
Huang, Jun,et al."Fluorinated Head-to-Head Dialkoxybithiophene: A New Electron-Donating Building Block for High-Performance Polymer Semiconductors".Advanced Electronic Materials 4.3(2018).
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