Interface Engineering via Photopolymerization-Induced Phase Separation for Flexible UV-Responsive Phototransistors

Peng, Haiyan1,2; Yan, Yan2,4; Yang, Yingkui5; Zhou, Li2; Wu, Wei2; Sun, Qijun2; Zhuang, Jiaqing2; Han, Su-Ting2,4; Ko, Chi-Chiu3; Xu, Zongxiang6; Xie, Xiaolin1; Li, Robert K. Y.2; Roy, Vellaisamy A. L.2

2018-02-28

10.1021/acsami.7b19371

ACS Applied Materials & Interfaces   影响因子和分区

1944-8244

Interface engineering has been recognized to be substantially critical for achieving efficient charge separation, charge carrier transport, and enhanced device performance in emerging optoelectronics. Nevertheless, precise control of the interface structure using current techniques remains a formidable challenge. Herein, we demonstrate a facile and versatile protocol wherein in situ thiol-ene click photo polymerization-induced phase separation is implemented for constructing heterojunction semiconductor interfaces. This approach generates continuous mountainlike heterojunction interfaces that favor efficient exciton dissociation at the interface while providing a continuous conductive area for hole transport above the interface. This facile low-temperature paradigm presents good adaptability to both rigid and flexible substrates, offering high-performance UV-responsive phototransistors with a normalized detectivity up to 6.3 X 10(14) cm Hz(1/2) W-1 (also called jones). Control experiments based on ex situ photopolymerization and in situ thermal polymerization are also implemented to demonstrate the superiority of this novel paradigm.

UV sensor photodetector phototransistor interface engineering photopolymerization click chemistry semiconductor thiol-ene

SCI ; EI

英语

其他

National Natural Science Foundation of China[51433002] ; National Natural Science Foundation of China[51503045]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000426618000078

AMER CHEMICAL SOC

20181004861388

Carrier transport ; Heterojunctions ; Phase separation ; Photodetectors ; Photopolymerization ; Phototransistors ; Semiconductor materials ; Temperature

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Physical Chemistry:801.4

Web of Science

1.Huazhong Univ Sci & Technol, Sch Chem & Chem Engn, Minist Educ, Key Lab Mat Chem Energy Convers & Storage, Wuhan 430074, Peoples R China
2.City Univ Hong Kong, Dept Mat Sci & Engn, State Key Lab Millimeter Waves, Tat Chee Ave, Kowloon Tong, Hong Kong, Peoples R China
3.City Univ Hong Kong, Dept Biol & Chem, Tat Chee Ave, Kowloon Tong, Hong Kong, Peoples R China
4.Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Peoples R China
5.South Central Univ Nationalities, Sch Chem & Mat Sci, Wuhan 430074, Peoples R China
6.South Univ Sci & Technol China, Dept Chem, Shenzhen 518055, Peoples R China

Peng, Haiyan,Yan, Yan,Yang, Yingkui,et al. Interface Engineering via Photopolymerization-Induced Phase Separation for Flexible UV-Responsive Phototransistors[J]. ACS Applied Materials & Interfaces,2018,10(8):7487-7496.

Peng, Haiyan.,Yan, Yan.,Yang, Yingkui.,Zhou, Li.,Wu, Wei.,...&Roy, Vellaisamy A. L..(2018).Interface Engineering via Photopolymerization-Induced Phase Separation for Flexible UV-Responsive Phototransistors.ACS Applied Materials & Interfaces,10(8),7487-7496.

Peng, Haiyan,et al."Interface Engineering via Photopolymerization-Induced Phase Separation for Flexible UV-Responsive Phototransistors".ACS Applied Materials & Interfaces 10.8(2018):7487-7496.