题名 | First-principles study of the atomic and electronic properties of (100) stacking faults in BaSnO3 crystal |
作者 | |
通讯作者 | Guo, Yao |
发表日期 | 2018-02-16
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DOI | |
发表期刊 | |
ISSN | 0009-2614
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EISSN | 1873-4448
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卷号 | 694页码:65-69 |
摘要 | We investigated the atomic and electronic properties of (100) stacking fault (SF) in undoped and La-doped BaSnO3 by first-principles calculations. It was found that 1/2[111] (100) SF is energetically favorable when Ba atoms occupy the interface while 1/2 (100) [101] SF becomes the most stable when the SF interface is occupied by Sn atoms. SF influences the distribution of La dopant and the electric properties of the system. In the presence of SF, electronic states near the Fermi level decrease and the bandgap expands by about 0.6 eV. Our results suggest that SF is one of the possible origins for the performance degradation. (C) 2018 Elsevier B.V. All rights reserved. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | National Natural Science Foundation of China[21302003]
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WOS研究方向 | Chemistry
; Physics
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WOS类目 | Chemistry, Physical
; Physics, Atomic, Molecular & Chemical
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WOS记录号 | WOS:000424632900012
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出版者 | |
EI入藏号 | 20180604777118
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EI主题词 | Atoms
; Calculations
; Doping (additives)
; Electronic properties
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EI分类号 | Mathematics:921
; Atomic and Molecular Physics:931.3
; Crystal Lattice:933.1.1
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ESI学科分类 | CHEMISTRY
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:1
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/28027 |
专题 | 理学院_物理系 |
作者单位 | 1.Anyang Inst Technol, Dept Chem & Environm Engn, Anyang 455000, Peoples R China 2.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Hubei, Peoples R China 3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 4.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China |
第一作者单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Xue, Yuanbin,Wang, Wenyuan,Guo, Yao. First-principles study of the atomic and electronic properties of (100) stacking faults in BaSnO3 crystal[J]. CHEMICAL PHYSICS LETTERS,2018,694:65-69.
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APA |
Xue, Yuanbin,Wang, Wenyuan,&Guo, Yao.(2018).First-principles study of the atomic and electronic properties of (100) stacking faults in BaSnO3 crystal.CHEMICAL PHYSICS LETTERS,694,65-69.
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MLA |
Xue, Yuanbin,et al."First-principles study of the atomic and electronic properties of (100) stacking faults in BaSnO3 crystal".CHEMICAL PHYSICS LETTERS 694(2018):65-69.
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
Xue-2018-First-princ(1358KB) | -- | -- | 限制开放 | -- |
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