Role of fluttering dislocations in the thermal interface resistance between a silicon crystal and plastic solid He-4

Amrit, Jay1; Ramiere, Aymeric1,3; Volz, Sebastian2

2018-01-22

10.1103/PhysRevB.97.014308

PHYSICAL REVIEW B   影响因子和分区

2469-9950

2469-9969

A quantum solid (solid He-4) in contact with a classical solid defines a new class of interfaces. In addition to its quantum nature, solid He-4 is indeed a very plastic medium. We examine the thermal interface resistance upon solidification of superfluid He-4 in contact with a silicon crystal surface (111) and show that dislocations play a crucial role in the thermal interface transport. The growth of solid He-4 and the measurements are conducted at the minimum of the melting curve of helium (0.778 K and similar to 25 bar). The results display a first-order transition in the Kapitza resistance from a value of R-K,R- L = (80 +/- 8) cm(2)K/W at a pressure of 24.5 bar to a value of R-K,R- S = (41.7 +/- 8) cm(2)K/W after the formation of solid helium at similar to 25.2 bar. The drop in R-K,R- S is only of a factor of similar to 2, although transverse phonon modes in solid He-4 now participate in heat transmission at the interface. We provide an explanation for the measured R-K,R- S by considering the interaction of thermal phonons with vibrating dislocations in solid He-4. We demonstrate that this mechanism, also called fluttering, induces a thermal resistance R-Fl alpha NdT-6, where T is the temperature and N-d is the density of dislocations. We estimate that for dislocation densities on the order of similar to 10(7)cm(-) (2), R-Fl predominates over the boundary resistance R-K,R- S. These fundamental findings shed light on the role of dislocations and provide a quantitative explanation for previous experiments which showed no measurable change in the Kapitza resistance between Cu and superfluid He-4 upon solidification of the latter. This demonstrates the possibility of using dislocations as an additional means to tailor thermal resistances at interfaces, formed especially with a plastic material.

SCI ; EI

英语

其他

LabeX LaSIPS[ANR-10-LABX-0040-LaSIPS] ; LabeX LaSIPS[ANR-11-IDEX-0003-02]

Materials Science ; Physics

Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000423340100003

AMER PHYSICAL SOC

PHYSICS

Web of Science

1.Univ Paris 11, Univ Paris Saclay, CNRS, Lab Informat Mecan & Sci Ingenieur, Rue John von Neumann, F-91405 Orsay, France
2.Univ Tokyo, Inst Ind Sci, CNRS, Lab Integrated Micro Mechatron Syst, Tokyo 1538505, Japan
3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China

Amrit, Jay,Ramiere, Aymeric,Volz, Sebastian. Role of fluttering dislocations in the thermal interface resistance between a silicon crystal and plastic solid He-4[J]. PHYSICAL REVIEW B,2018,97(1).

Amrit, Jay,Ramiere, Aymeric,&Volz, Sebastian.(2018).Role of fluttering dislocations in the thermal interface resistance between a silicon crystal and plastic solid He-4.PHYSICAL REVIEW B,97(1).

Amrit, Jay,et al."Role of fluttering dislocations in the thermal interface resistance between a silicon crystal and plastic solid He-4".PHYSICAL REVIEW B 97.1(2018).