Gate-tunable strong-weak localization transition in few-layer black phosphorus

Long, Gen1,2; Xu, Shuigang1,2; Cai, Xiangbin1,2; Wu, Zefei1,2; Han, Tianyi1,2; Lin, Jiangxiazi1,2; Cheng, Chun3,4; Cai, Yuan1,2; Wang, Xinran5,6; Wang, Ning1,2

2018-01-19

10.1088/1361-6528/aa9bc1

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

Atomically-thin black phosphorus (BP) field-effect transistors show strong-weak localization transition, which is tunable through gate voltages. Hopping transports through charge impurityinduced localized states are observed at low carrier density regime. Variable-range hopping model is applied to simulate scattering behaviors of charge carriers. In the high carrier concentration regime, a negative magnetoresistance indicates weak localization effects. The extracted phase coherence length is power-law temperature-dependent (similar to T-0.48 +/- 0.03) and demonstrates inelastic electron-electron interactions and the 2D transport features in few-layer BP field-effect devices. The competition between localization and phase coherence lengths is investigated and analyzed based on observed gate-tunable strong-weak localization transition in few-layer BP.

black phosphorus strong localization weak localization variable-range hopping nearest-neighbor hopping

SCI ; EI

英语

其他

Guangdong-Hong Kong joint innovation project[2016A050503012]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000418355300003

IOP PUBLISHING LTD

20175204572033

Carrier concentration ; Electron-electron interactions ; Phosphorus

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Atomic and Molecular Physics:931.3

MATERIALS SCIENCE

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China
2.Hong Kong Univ Sci & Technol, Ctr Quantum Mat, Hong Kong, Peoples R China
3.South Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
4.South Univ Sci & Technol, Shenzhen Key Lab Nanoimprint Technol, Shenzhen 518055, Peoples R China
5.Nanjing Univ, Sch Elect Sci & Engn, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
6.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

Long, Gen,Xu, Shuigang,Cai, Xiangbin,et al. Gate-tunable strong-weak localization transition in few-layer black phosphorus[J]. NANOTECHNOLOGY,2018,29(3).

Long, Gen.,Xu, Shuigang.,Cai, Xiangbin.,Wu, Zefei.,Han, Tianyi.,...&Wang, Ning.(2018).Gate-tunable strong-weak localization transition in few-layer black phosphorus.NANOTECHNOLOGY,29(3).

Long, Gen,et al."Gate-tunable strong-weak localization transition in few-layer black phosphorus".NANOTECHNOLOGY 29.3(2018).