Investigating the impact of the defect dynamic characteristics on the PBTI in the high-kappa gate device

Liu, Xianqiang1; Xu, Xiaodi1; Gu, Chenjie1; Gu, Renyuan2; Wang, Weiwei3; Liu, Wenjun4,6; Duan, Tianli5

2018-01

10.1016/j.microrel.2017.11.012

MICROELECTRONICS RELIABILITY   影响因子和分区

0026-2714

Recent device reliability studies on the metal/high-kappa device observed the inter-convertible characteristics of the electron trap levels between the shallow and deep defect states under cyclic positive-bias temperature stressing. Although the oxygen vacancy and oxygen interstitial defect, being two typical types of defects in the high-kappa oxide, have been criticized as the culprit for the device reliability issue and investigated in many simulations, all results have indicated that the defect levels induced by them were either too shallow or too deep and failed to explain the above experimental observation. Nevertheless, studies on the static characteristics of vacancy-interstitial (V-O-O-i) model showed scattering distributed electron trap levels within the bandgap, making it as a promising defect type that can account for the above experimental observation. In this work, we investigated the dynamic characteristics of the V-O-O-i defect pair under PBTI stress by tuning the relative position of V-O and O-i. Our simulation results show multiple energy barriers for the structure transformation along the O-i migration path, and the charge trap level of the specific defect pair during the O-i migration is shown to be adjustable within the HfO2 band gap, depending on the O-i positions. These results depict an atomic picture to help us understand the defect electrical behavior under cyclic positive bias stress condition.

Positive bias temperature instability High-kappa dielectrics V-O-O-i defect pair Defect level evolution

SCI ; EI

英语

其他

open funding of the first-class disciplines in physics, Zhejiang Province[xkzwl1605/xkzwl1614]

Engineering ; Science & Technology - Other Topics ; Physics

Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied

WOS:000423891400004

PERGAMON-ELSEVIER SCIENCE LTD

20175204575709

Dielectric materials ; Electron traps ; Energy gap ; Hafnium oxides ; Oxygen ; Oxygen vacancies

Dielectric Materials:708.1 ; Chemical Products Generally:804 ; Crystalline Solids:933.1 ; Crystal Lattice:933.1.1

ENGINEERING

Web of Science

1.Ningbo Univ, Dept Microelect, Fac Sci, Ningbo 315211, Zhejiang, Peoples R China
2.Guilin Univ Elect Technol, Sch Comp Sci & Informat Secur, Guangxi 541004, Peoples R China
3.Ningbo Univ, Dept Phys, Fac Sci, Ningbo 315211, Zhejiang, Peoples R China
4.Fudan Univ, Sch Microelect, Shanghai 200433, Peoples R China
5.South Univ Sci & Technol, Mat Characterizat & Preparat Ctr, Shenzhen 518055, Peoples R China
6.Fudan Univ, Dept Microelect, State Key Lab ASIC & Syst, Shanghai 201203, Peoples R China

Liu, Xianqiang,Xu, Xiaodi,Gu, Chenjie,et al. Investigating the impact of the defect dynamic characteristics on the PBTI in the high-kappa gate device[J]. MICROELECTRONICS RELIABILITY,2018,80:24-28.

Liu, Xianqiang.,Xu, Xiaodi.,Gu, Chenjie.,Gu, Renyuan.,Wang, Weiwei.,...&Duan, Tianli.(2018).Investigating the impact of the defect dynamic characteristics on the PBTI in the high-kappa gate device.MICROELECTRONICS RELIABILITY,80,24-28.

Liu, Xianqiang,et al."Investigating the impact of the defect dynamic characteristics on the PBTI in the high-kappa gate device".MICROELECTRONICS RELIABILITY 80(2018):24-28.