Resistive switching and photovoltaic effects in ferroelectric BaTiO3-based capacitors with Ti and Pt top electrodes

Fan, Hua1,2,3,4; Chen, Chao1,2; Fan, Zhen1,2; Zhang, Luyong1,2; Tan, Zhengwei1,2; Li, Peilian1,2; Huang, Zhifeng1,2; Yao, Junxiang1,2; Tian, Guo1,2; Luo, Qiuyuan1,2; Li, Zhongwen1,2; Song, Xiao1,2; Chen, Deyang1,2; Zeng, Min1,2; Gao, Jinwei1,2; Lu, Xubing1,2; Zhao, Yue3,4; Gao, Xingsen1,2; Liu, Jun-Ming1,2,5,6

2017-12-18

10.1063/1.4999982

APPLIED PHYSICS LETTERS   影响因子和分区

0003-6951

1077-3118

We have comparatively studied the dielectric, ferroelectric, conduction, and photovoltaic properties of Ti/BaTiO3 (BTO)/SrRuO3 (SRO) and Pt/BTO/SRO capacitors. The resistive switching (RS) is observed in the Pt/BTO/SRO capacitor while it is absent in the Ti/BTO/SRO capacitor, which may be attributed to the interfacial layer existing between Pt and BTO and the Ti/BTO Ohmic interface, respectively. Further analyses on the conduction mechanisms suggest that the RS may be caused by the opening/closing of conduction paths in the Pt/BTO interfacial layer, whereas the polarization is ruled out as the origin of RS because of the inconsistency between the RS switching voltages and coercive voltages. On the other hand, it is observed that the photovoltaic effects (PVEs) in both Ti/BTO/SRO and Pt/BTO/SRO capacitors are electrically unswitchable and the open-circuit voltages of the two capacitors are similar in magnitude, implying that the PVE is driven by an internal bias field rather than the polarization-induced field. The existence of such an internal bias field is indicated by the self-polarization and imprint phenomena. Our study demonstrates that the interfacial layer and the internal bias field can be the major causes for the RS and PVE in certain ferroelectric capacitors, respectively, whereas the polarization may not necessarily play a role. Published by AIP Publishing.

SCI ; EI

英语

NI期刊

其他

Shenzhen Science and Technology Innovation Commission[JCYJ20160613160524999]

Physics

Physics, Applied

WOS:000418648800026

AMER INST PHYSICS

20175204582202

Barium titanate ; Bias voltage ; Ferroelectricity ; Open circuit voltage ; Polarization

Electricity: Basic Concepts and Phenomena:701.1 ; Electronic Circuits:713 ; Inorganic Compounds:804.2

PHYSICS

Web of Science

1.South China Normal Univ, South China Acad Adv Optoelect, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
2.South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Opt Informat Mat & Technol, Guangzhou 510006, Guangdong, Peoples R China
3.South Univ Sci & Technol China, Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
4.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
5.Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
6.Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

Fan, Hua,Chen, Chao,Fan, Zhen,et al. Resistive switching and photovoltaic effects in ferroelectric BaTiO3-based capacitors with Ti and Pt top electrodes[J]. APPLIED PHYSICS LETTERS,2017,111(25).

Fan, Hua.,Chen, Chao.,Fan, Zhen.,Zhang, Luyong.,Tan, Zhengwei.,...&Liu, Jun-Ming.(2017).Resistive switching and photovoltaic effects in ferroelectric BaTiO3-based capacitors with Ti and Pt top electrodes.APPLIED PHYSICS LETTERS,111(25).

Fan, Hua,et al."Resistive switching and photovoltaic effects in ferroelectric BaTiO3-based capacitors with Ti and Pt top electrodes".APPLIED PHYSICS LETTERS 111.25(2017).