题名 | Magnetotransport properties of Cr1-delta Te thin films with strong perpendicular magnetic anisotropy |
作者 | |
通讯作者 | Wang, G.; He, H. T. |
发表日期 | 2017-12-15
|
DOI | |
发表期刊 | |
ISSN | 2158-3226
|
卷号 | 7期号:12 |
摘要 | P-type ferromagnetic Cr1-delta Te thin films with the Curie temperature of 170K were epitaxially grown on GaAs substrate. Low-temperature magnetotransport study reveals that the film has a strong perpendicular magnetic anisotropy (PMA) and an anisotropic magnetoresistance (AMR) ratio up to 8.1%. Furthermore, reduced anomalous Hall effect is observed at low temperatures in Cr1-delta Te, suggesting the possible crossover of the contribution to AHE from the intrinsic mechanism to extrinsic skew scattering. Distinctive from conventional transition metal ferromagnets, the AMR ratio is also greatly suppressed at low temperatures. Our work demonstrates that epitaxial Cr1-delta Te films are interesting platforms for studying the physics underlying the strong PMA and large AMR. (c) 2017 Author(s). |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 第一
; 通讯
|
资助项目 | Technology and Innovation Commission of Shenzhen Municipality[ZDSYS201703031659262]
; Technology and Innovation Commission of Shenzhen Municipality[JCYJ20160531190254691]
; Technology and Innovation Commission of Shenzhen Municipality[JCYJ20170412152334605]
|
WOS研究方向 | Science & Technology - Other Topics
; Materials Science
; Physics
|
WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
|
WOS记录号 | WOS:000418492500041
|
出版者 | |
EI入藏号 | 20175204574655
|
EI主题词 | Ferromagnetic Materials
; Ferromagnetism
; Gallium Arsenide
; Iii-v Semiconductors
; Magnetic Anisotropy
; Temperature
; Transition Metals
|
EI分类号 | Metallurgy And Metallography:531
; Thermodynamics:641.1
; Magnetism: Basic Concepts And Phenomena:701.2
; Magnetic Materials:708.4
; Chemical Products Generally:804
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:13
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/28395 |
专题 | 理学院_物理系 |
作者单位 | 1.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China 2.Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China 3.Univ Sci & Technol China, CAS, Key Lab Quantum Informat, Hefei 230026, Anhui, Peoples R China |
第一作者单位 | 物理系 |
通讯作者单位 | 物理系 |
第一作者的第一单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Zhou, L.,Chen, J. S.,Du, Z. Z.,et al. Magnetotransport properties of Cr1-delta Te thin films with strong perpendicular magnetic anisotropy[J]. AIP Advances,2017,7(12).
|
APA |
Zhou, L..,Chen, J. S..,Du, Z. Z..,He, X. S..,Ye, B. C..,...&He, H. T..(2017).Magnetotransport properties of Cr1-delta Te thin films with strong perpendicular magnetic anisotropy.AIP Advances,7(12).
|
MLA |
Zhou, L.,et al."Magnetotransport properties of Cr1-delta Te thin films with strong perpendicular magnetic anisotropy".AIP Advances 7.12(2017).
|
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
1.5011405.pdf(1485KB) | -- | -- | 开放获取 | -- | 浏览 |
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