Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

Cheng, Man Kit1; Liang, Jing1; Lai, Ying Hoi1; Pang, Liang Xi1; Liu, Yi1; Shen, Jun Ying1; Hou, Jian Qiang1; He, Qing Lin1; Xu, Bo Chao2; Chen, Jun Shu2; Wang, Gan2; Liu, Chang2; Lortz, Rolf1; Sou, Iam Keong1,3

2017-11-10

10.1088/1361-6528/aa8b81

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm(-1) was identified. Results from Raman spectroscopy, PL, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low vapor-pressure element.

large-area epitaxial growth monolayer MoSe2 incandescent Mo source

SCI ; EI

英语

其他

Shenzhen Science and Technology Innovations Committee[JCYJ20150630145302240] ; Shenzhen Science and Technology Innovations Committee[JCYJ20160531190254691] ; Shenzhen Science and Technology Innovations Committee[KQCX20140522151322951]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000412897000001

IOP PUBLISHING LTD

20174504364660

Atomic force microscopy ; Crystalline materials ; Energy dispersive spectroscopy ; Epitaxial growth ; High resolution transmission electron microscopy ; Molybdenum ; Photoelectron spectroscopy ; Raman spectroscopy ; Reflection high energy electron diffraction ; Thin films ; Transmission electron microscopy

Molybdenum and Alloys:543.3 ; Optical Devices and Systems:741.3 ; Atomic and Molecular Physics:931.3 ; Crystalline Solids:933.1 ; Crystal Growth:933.1.2

MATERIALS SCIENCE

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, 1088 Xueyuan Rd, Shenzhen, Guangdong, Peoples R China
3.Hong Kong Univ Sci & Technol, William Mong Inst Nano Sci & Technol, Hong Kong, Hong Kong, Peoples R China

Cheng, Man Kit,Liang, Jing,Lai, Ying Hoi,et al. Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source[J]. NANOTECHNOLOGY,2017,28(45).

Cheng, Man Kit.,Liang, Jing.,Lai, Ying Hoi.,Pang, Liang Xi.,Liu, Yi.,...&Sou, Iam Keong.(2017).Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source.NANOTECHNOLOGY,28(45).

Cheng, Man Kit,et al."Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source".NANOTECHNOLOGY 28.45(2017).