南方科技大学知识苑(SUSTech KC): Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction

题名	Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction
作者	Che，Jiamang 1,2; Shao，Hua 1,2; Chu，Chunshuang 1; Li，Qingqing 1,2; Zhang，Yonghui 1,2; Sun，Xiaowei3 ; Zhang，Zi Hui 1,2
发表日期	2022-02-15
DOI	10.1364/OL.448632
发表期刊	OPTICS LETTERS 影响因子和分区
ISSN	0146-9592
EISSN	1539-4794
卷号	47 期号:4页码:798-801
摘要	In this work, a 280-nm-wavelength deep-ultraviolet light-emitting diode (DUV LED) with a p-GaN/SiO/ITO tunnel junction is fabricated and investigated. Due to the decreased tunnel region width and enhanced electric field intensity in the 1-nm-thick SiO layer, the interband tunneling efficiency and the corresponding hole injection efficiency are promoted. Therefore, the external quantum efficiency (EQE) for the proposed device is increased when compared with a traditional DUV LED. In addition, an improved current spreading effect is observed for our proposed device. As a result, improved wall-plug efficiency (WPE) is obtained owing to the increased optical power and decreased forward operating voltage. Meanwhile, the enhanced electric field intensity in the SiO layer reduces the voltage drop in the p-n junction region for the proposed device, and thus the leakage current is reduced.
相关链接	[Scopus记录]
收录类别	SCI ; EI
语种	英语
学校署名	其他
资助项目	National Natural Science Foundation of China[62074050] ; Natural Science Foundation of Hebei Province["F2018202080","F2020202030"] ; State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology[EERI_PI2020008] ; Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, Nanjing University[njuzds2021-005] ; Basic and Applied Basic Research Foundation of Guangdong Province[2019A1515111053]
WOS研究方向	Optics
WOS类目	Optics
WOS记录号	WOS:000756709400017
出版者	OPTICAL SOC AMER
EI入藏号	20220611608138
EI主题词	Aluminum gallium nitride ; Efficiency ; Electric fields ; Gallium nitride ; Light emitting diodes ; Silica ; Silicon ; Tunnel junctions ; Ultraviolet radiation
EI分类号	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Production Engineering:913.1
ESI学科分类	PHYSICS
Scopus记录号	2-s2.0-85124138191
来源库	Scopus
引用统计	被引频次[WOS]：2
成果类型	期刊论文
条目标识符	http://sustech.caswiz.com/handle/2SGJ60CL/284464
专题	工学院工学院_电子与电气工程系
作者单位	1.State Key Laboratory of Reliability and Intelligence of Electrical Equipment,Hebei University of Technology,Tianjin,5340 Xiping Road, Beichen District,300401,China 2.Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin,5340 Xiping Road, Beichen District,300401,China 3.Department of Electrical and Electronic Engineering,College of Engineering,South University of Science and Technology,Guangdong,1088 Xue-Yuan Road, Nanshan, Shenzhen,518055,China
推荐引用方式 GB/T 7714	Che，Jiamang,Shao，Hua,Chu，Chunshuang,et al. Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction[J]. OPTICS LETTERS,2022,47(4):798-801.
APA	Che，Jiamang.,Shao，Hua.,Chu，Chunshuang.,Li，Qingqing.,Zhang，Yonghui.,...&Zhang，Zi Hui.(2022).Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction.OPTICS LETTERS,47(4),798-801.
MLA	Che，Jiamang,et al."Enhanced performance of an AlGaN-based deep ultraviolet light-emitting diode using a p+-GaN/SiO2/ITO tunnel junction".OPTICS LETTERS 47.4(2022):798-801.