题名 | Absence of quantum anomalous Hall state in 4d transition-metal-doped Bi2Se3: An ab initio study |
作者 | |
通讯作者 | Zhu, Junyi |
发表日期 | 2017-11-06
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DOI | |
发表期刊 | |
ISSN | 2469-9950
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EISSN | 2469-9969
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卷号 | 96期号:17 |
摘要 | The realization of insulating ferromagnetic states in topological insulator (TI) systems, with sufficiently high Curie temperatures (T-C) and large magnetically induced gaps, has been the key bottleneck towards the realization of the quantum anomalous Hall effect (QAHE). Despite the limited reports on 3d or 4f transition-metal (TM)-doped Bi2Se3, there remains a lack of systematic studies on 4d TMs, which may be potential candidates since the atomic sizes of 4d TMs and that of Bi are similar. Here, we report a theoretical work that probes the magnetic behaviors of the 4d TM-doped Bi2Se3 system. We discovered that among the 4d TMs, Nb andMo can createmagnetic moments of 1.76 and 2.96 mu B in Bi2Se3, respectively. While Mo yields a stable gapless antiferromagnetic ground state, Nb favors a strong ferromagnetic order, with the magnetic coupling strength (T-C)similar to 6 times of that induced by the traditional Cr impurity. Yet, we found that Nb is still unfavorable to support the QAH state in Bi2Se3 because of the reduced correlation in the t(2g) band that gives a gapless character. This rationale is not only successful in interpreting why Nb, the strongest candidate among 4d TMs for achieving ferromagnetism in Bi2Se3, actually cannot lead to QAHE in the Bi2Se3 system even with the assistance of codoping but also is particularly important to fully understand the mechanism of acquisition of insulating ferromagnetic states inside TI. On the other hand, we discovered that Mo-doped Bi2Se3 favors strong antiferromagnetic states and may lead to superconducting states. |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
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学校署名 | 其他
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资助项目 | Chinese University of Hong Kong[4053084]
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WOS研究方向 | Materials Science
; Physics
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WOS类目 | Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
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WOS记录号 | WOS:000414395600005
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出版者 | |
ESI学科分类 | PHYSICS
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来源库 | Web of Science
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引用统计 |
被引频次[WOS]:3
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成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/28450 |
专题 | 理学院_物理系 |
作者单位 | 1.Chinese Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.Univ Utah, Dept Mat Sci & Engn, Salt Lake City, UT 84112 USA 3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China |
第一作者单位 | 物理系 |
推荐引用方式 GB/T 7714 |
Deng, Bei,Liu, Feng,Zhu, Junyi. Absence of quantum anomalous Hall state in 4d transition-metal-doped Bi2Se3: An ab initio study[J]. PHYSICAL REVIEW B,2017,96(17).
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APA |
Deng, Bei,Liu, Feng,&Zhu, Junyi.(2017).Absence of quantum anomalous Hall state in 4d transition-metal-doped Bi2Se3: An ab initio study.PHYSICAL REVIEW B,96(17).
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MLA |
Deng, Bei,et al."Absence of quantum anomalous Hall state in 4d transition-metal-doped Bi2Se3: An ab initio study".PHYSICAL REVIEW B 96.17(2017).
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条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
PhysRevB.96.174404.p(467KB) | -- | -- | 限制开放 | -- |
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