Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates

Wang, Hui1,2,3; Wang, Ning1,3; Jiang, Ling-Li1,3; Zhao, Hai-Yue1,3; Lin, Xin-Peng1,3; Yu, Hong-Yu1,3

2017-11

10.1016/j.sse.2017.08.005

SOLID-STATE ELECTRONICS   影响因子和分区

0038-1101

1879-2405

In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (V-th) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the V-th shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of V-th as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number. (C) 2017 Elsevier Ltd. All rights reserved.

AlGaN/GaN HEMT Split floating gates Enhancement-mode

SCI ; EI

英语

第一 ; 通讯

Research of AlGaN HEMT MEMS sensor for work in extreme environment[JCYJ20170412153356899]

Engineering ; Physics

Engineering, Electrical & Electronic ; Physics, Applied ; Physics, Condensed Matter

WOS:000414813400009

PERGAMON-ELSEVIER SCIENCE LTD

20173404066224

Aluminum gallium nitride ; Drain current ; Electron gas ; Electron mobility ; Gallium nitride ; III-V semiconductors ; Threshold voltage ; Two dimensional electron gas

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Southeast Univ, Sch Elect Sci & Engn, Nanjing 210096, Jiangsu, Peoples R China
3.Shenzhen Key Lab Third Generat Semicond, Shenzhen 518055, Guangdong, Peoples R China

Wang, Hui,Wang, Ning,Jiang, Ling-Li,et al. Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates[J]. SOLID-STATE ELECTRONICS,2017,137:52-57.

Wang, Hui,Wang, Ning,Jiang, Ling-Li,Zhao, Hai-Yue,Lin, Xin-Peng,&Yu, Hong-Yu.(2017).Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates.SOLID-STATE ELECTRONICS,137,52-57.

Wang, Hui,et al."Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates".SOLID-STATE ELECTRONICS 137(2017):52-57.