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题名

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

作者
通讯作者Liu, Ming; Wang, Hong
发表日期
2017-10-23
DOI
发表期刊
ISSN
0003-6951
EISSN
1077-3118
卷号111期号:17
摘要

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) theta-2 theta scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics. Published by AIP Publishing.

相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI期刊
学校署名
通讯
资助项目
National 973 projects of China[2015CB654603] ; National 973 projects of China[2015CB654903]
WOS研究方向
Physics
WOS类目
Physics, Applied
WOS记录号
WOS:000413863400020
出版者
EI入藏号
20174404361034
EI主题词
Aluminum Compounds ; Anisotropy ; Calcium Compounds ; Crystal Orientation ; Ferromagnetism ; Hafnium Oxides ; Iron Compounds ; Metals ; Mos Devices ; Neodymium Compounds ; Oxide Films ; Oxide Semiconductors ; Phase Structure ; Pulsed Laser Deposition ; Saturation Magnetization ; x Ray Diffraction
EI分类号
Magnetism: Basic Concepts And Phenomena:701.2 ; Semiconductor Devices And Integrated Circuits:714.2 ; Laser Applications:744.9 ; Chemical Products Generally:804 ; Physical Properties Of Gases, Liquids And Solids:931.2 ; Crystal Lattice:933.1.1
ESI学科分类
PHYSICS
来源库
Web of Science
引用统计
被引频次[WOS]:4
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/28510
专题工学院_材料科学与工程系
作者单位
1.Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China
2.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China
通讯作者单位材料科学与工程系
推荐引用方式
GB/T 7714
Liu, Wenlong,Liu, Ming,Zhang, Ruyi,et al. Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films[J]. APPLIED PHYSICS LETTERS,2017,111(17).
APA
Liu, Wenlong,Liu, Ming,Zhang, Ruyi,Ma, Rong,&Wang, Hong.(2017).Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films.APPLIED PHYSICS LETTERS,111(17).
MLA
Liu, Wenlong,et al."Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films".APPLIED PHYSICS LETTERS 111.17(2017).
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