Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide

Li, Liang1; Gong, Penglai2; Wang, Weike3; Deng, Bei2; Pi, Lejing1; Yu, Jing1; Zhou, Xing1; Shi, Xingqiang2; Li, Huiqiao1; Zhai, Tianyou1,4,5

2017-10

10.1021/acsnano.7b04860

ACS Nano   影响因子和分区

1936-0851

1936-086X

An interesting in-plane anisotropic layered dimetal chalcogenide Ta2NiS5 is introduced, and the optical and electrical properties with respect to its in-plane anisotropy are systematically studied. The Raman vibration modes have been identified by Raman spectra measurements combined with calculations of phonon-related properties. Importantly, the Ta2NiS5 flakes exhibit strong anisotropic Raman response under the angle-resolved polarized Raman spectroscopy measurements. We found that Raman intensities of the Ag mode not only depend on rotation angle but are also related to the sample thickness. In contrast, the infrared absorption with light polarized along the a axis direction is always larger than that in the c axis direction regardless of thickness under the polarization-resolved infrared spectroscopy measurements. Remarkably, the first-principles calculations combined with angle-resolved conductance measurements indicate strong anisotropic conductivity of Ta2NiS5. Our results not only prove Ta2NiS5 is a promising in-plane anisotropic 2D material but also provide an interesting platform for future functionalized electronic devices.

anisotropy Ta2NiS5 2D material polarized Raman spectra electrical anisotropy

SCI ; EI

英语

NI期刊

其他

Fundamental Research Funds for the Central University[2015CB932600] ; Fundamental Research Funds for the Central University[2017ICFKJXX007]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000413992800070

AMER CHEMICAL SOC

20174604388755

Anisotropy ; Calculations ; Chalcogenides ; Infrared spectroscopy ; Light absorption ; Light polarization ; Nickel compounds ; Raman scattering ; Tantalum compounds

Light/Optics:741.1 ; Inorganic Compounds:804.2 ; Mathematics:921 ; Physical Properties of Gases, Liquids and Solids:931.2

Web of Science

1.Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
2.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
3.Hunan Normal Univ, Coll Phys & Informat Sci, Synerget Innovat Ctr Quantum Effects & Applicat,M, Key Lab Low Dimens Quantum Struct & Quantum Contr, Changsha 410081, Hunan, Peoples R China
4.Tianjin Univ, Dept Chem, Tianjin Key Lab Mol Optoelect Sci, Tianjin 300072, Peoples R China
5.Collaborat Innovat Ctr Chem Sci & Engn Tianjin, Tianjin 300072, Peoples R China

Li, Liang,Gong, Penglai,Wang, Weike,et al. Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide[J]. ACS Nano,2017,11(10):10264-10272.

Li, Liang.,Gong, Penglai.,Wang, Weike.,Deng, Bei.,Pi, Lejing.,...&Zhai, Tianyou.(2017).Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide.ACS Nano,11(10),10264-10272.

Li, Liang,et al."Strong In-Plane Anisotropies of Optical and Electrical Response in Layered Dimetal Chalcogenide".ACS Nano 11.10(2017):10264-10272.