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题名

Synthesis of WOn-WX2 (n=2.7, 2.9; X S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes

作者
通讯作者Sun, Xiao Wei; Han, Yu; Zhang, Hua
发表日期
2017-08-21
DOI
发表期刊
ISSN
1433-7851
EISSN
1521-3773
卷号56期号:35页码:10486-10490
摘要

Preparation of two-dimensional (2D) heterostructures is important not only fundamentally, but also technologically for applications in electronics and optoelectronics. Herein, we report a facile colloidal method for the synthesis of WOn-WX2 (n=2.7, 2.9; X=S, Se) heterostructures by sulfurization or selenization of WOn nanomaterials. The WOn-WX2 heterostructures are composed of WO2.9 nanoparticles (NPs) or WO2.7 nanowires (NWs) grown together with single- or few-layer WX2 nanosheets (NSs). As a proof-of-concept application, the WOn-WX2 heterostructures are used as the anode interfacial buffer layer for green quantum dot light-emitting diodes (QLEDs). The QLED prepared with WO2.9 NP-WSe2 NS heterostructures achieves external quantum efficiency (EQE) of 8.53 %. To our knowledge, this is the highest efficiency in the reported green QLEDs using inorganic materials as the hole injection layer.

关键词
相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI期刊
学校署名
通讯
资助项目
Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning[TP2015037]
WOS研究方向
Chemistry
WOS类目
Chemistry, Multidisciplinary
WOS记录号
WOS:000434546000037
出版者
EI入藏号
20173204018383
EI主题词
Charge Injection ; Diodes ; Efficiency ; Light Emitting Diodes ; Nanocrystals ; Optical Waveguides ; Organic Light Emitting Diodes (Oled) ; Selenium ; Selenium Compounds ; Semiconductor Quantum Dots ; Sulfur ; Tungsten
EI分类号
Tungsten And Alloys:543.5 ; Nonferrous Metals And Alloys Excluding Alkali And Alkaline Earth Metals:549.3 ; Semiconductor Devices And Integrated Circuits:714.2 ; Waveguides:714.3 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Production Engineering:913.1 ; Quantum Theory ; Quantum Mechanics:931.4
ESI学科分类
CHEMISTRY
来源库
Web of Science
引用统计
被引频次[WOS]:21
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/28709
专题工学院
工学院_电子与电气工程系
作者单位
1.Nanyang Technol Univ, Ctr Programmable Mat, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
2.Nanyang Technol Univ, Luminous Ctr Excellence Semicond Lighting & Displ, Sch Elect & Elect Engn, 50 Nanyang Ave, Singapore 639798, Singapore
3.King Abdullah Univ Sci & Technol, Adv Membranes & Porous Mat Ctr, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia
4.Southern Univ Sci & Technol, Coll Engn, Dept Elect & Elect Engn, 1088 Xue Yuan Rd, Shenzhen 518055, Guangdong, Peoples R China
5.Nanjing Tech Univ NanjingTech, Inst Adv Mat, 5 Xinmofan Rd, Nanjing 210009, Jiangsu, Peoples R China
6.Singapore Inst Mfg Technol, 71 Nanyang Dr, Singapore 638075, Singapore
通讯作者单位工学院;  电子与电气工程系
推荐引用方式
GB/T 7714
Han, Shikui,Yang, Xuyong,Zhu, Yihan,et al. Synthesis of WOn-WX2 (n=2.7, 2.9; X S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,2017,56(35):10486-10490.
APA
Han, Shikui.,Yang, Xuyong.,Zhu, Yihan.,Tan, Chaoliang.,Zhang, Xiao.,...&Zhang, Hua.(2017).Synthesis of WOn-WX2 (n=2.7, 2.9; X S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes.ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,56(35),10486-10490.
MLA
Han, Shikui,et al."Synthesis of WOn-WX2 (n=2.7, 2.9; X S, Se) Heterostructures for Highly Efficient Green Quantum Dot Light-Emitting Diodes".ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 56.35(2017):10486-10490.
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