Flexible pCu2Se-nAg2Se thermoelectric devices via in situ conversion from printed Cu patterns

Xie，Jinqi1,2; Han，Meng1; Zeng，Xiangliang1; Mao，Dasha3; Li，Haitong1; Zeng，Xiaoliang1; Liu，Ruiheng1; Ren，Linlin1; Sun，Rong1; Xu，Jianbin4

2022-05-01

10.1016/j.cej.2022.135172

CHEMICAL ENGINEERING JOURNAL   影响因子和分区

1385-8947

1873-3212

Flexible thermoelectric (TE) devices have great potential in wearable electronics, but there is great challenge to realize robust TE device with high performance via feasible integration process. Herein, based on precisely printed copper patterns, a flexible pCuSe-nAgSe TE device is initially realized by in situ ion exchange reaction. The as-prepared CuSe and AgSe films possess typical hierarchical defects including atomic scale vacancies, the nanosheet fragments and microscale porous structure, which could significantly scatter phonons in wide frequency range. Accordingly, ultra-low thermal conductivity (CuSe: 0.13 W m K; AgSe: 0.15 W m K) and optimal ZTs (CuSe: 0.5; AgSe: 0.7) are achieved. Meanwhile, the as-fabricated pCuSe-nAgSe TE device exhibits an excellent power density of 13.4 W m at a temperature gradient of 40 K, which is among the highest values of printed in-plane film devices. Furthermore, the good adhesion between TE films and porous PI substrate endowed excellent flexibility and stability of pCuSe-nAgSe devices.

Ag2Se Cu2Se Flexible thermoelectric devices Hierarchical defects In situ

SCI ; EI

英语

其他

Guangdong Province Key Field R&D Program Project[2020B010190004] ; Shenzhen Science and Tech-nology Research Funding["JCYJ20200109114401708","JCYJ20180507182530279","JCYJ20210324115611030"] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019354,2019253]

Engineering

Engineering, Environmental ; Engineering, Chemical

WOS:000774320400002

ELSEVIER SCIENCE SA

20220711630387

Copper ; Copper compounds ; Flexible electronics ; Ion exchange ; Selenium compounds ; Silver compounds ; Sodium compounds ; Thermal conductivity

Copper:544.1 ; Thermodynamics:641.1 ; Electronic Equipment, General Purpose and Industrial:715 ; Chemical Reactions:802.2 ; Materials Science:951

ENGINEERING

2-s2.0-85124408706

Scopus

1.Shenzhen Institute of Advanced Electronic Materials,Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen,518055,China
2.School of Chemistry and Chemical Engineering,University of South China,Hengyang,421001,China
3.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Electronic Engineering,The Chinese University of Hong Kong,Hong Kong

Xie，Jinqi,Han，Meng,Zeng，Xiangliang,et al. Flexible pCu2Se-nAg2Se thermoelectric devices via in situ conversion from printed Cu patterns[J]. CHEMICAL ENGINEERING JOURNAL,2022,435.

Xie，Jinqi.,Han，Meng.,Zeng，Xiangliang.,Mao，Dasha.,Li，Haitong.,...&Xu，Jianbin.(2022).Flexible pCu2Se-nAg2Se thermoelectric devices via in situ conversion from printed Cu patterns.CHEMICAL ENGINEERING JOURNAL,435.

Xie，Jinqi,et al."Flexible pCu2Se-nAg2Se thermoelectric devices via in situ conversion from printed Cu patterns".CHEMICAL ENGINEERING JOURNAL 435(2022).