Thickness dependent magneto transport properties of WTe2 thin films

Yi, Ya1; Wu, Changming1; Wang, Huanwen1; Liu, Hongchao1; Li, Hui1; Zhang, Huachen1; He, Hongtao2; Wang, Jiannong1

2017-07

10.1016/j.ssc.2017.05.017

SOLID STATE COMMUNICATIONS   影响因子和分区

0038-1098

1879-2766

We report the systemic magneto transport studies on a-few-layers exfoliated WTe2 thin film devices. The non saturating and large magnetoresistance (MR), proportional to B-2, are observed in all devices. Hall effect modeling using the classical two-band model indicate the nearly identical electron and hole densities in thicker devices while unequal densities of electrons and holes in thinner devices at low temperatures. As a result, we attribute the large non-saturating MR at low temperatures in thicker devices to balanced electron and hole density while in thinner devices to low mobility caused by surface contamination and degradation. Our results suggest both carrier densities and mobility play significant roles in determining the magnitude and the non saturating behavior of MR.

WTe2 XMR

SCI ; EI

英语

其他

Raith-HKUST Nanotechnology Laboratory at MCPF[SEG HKUST08]

Physics

Physics, Condensed Matter

WOS:000403995300010

PERGAMON-ELSEVIER SCIENCE LTD

20172103694931

Hole mobility ; Thin film devices ; Thin films

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2

PHYSICS

Web of Science

1.Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China

Yi, Ya,Wu, Changming,Wang, Huanwen,et al. Thickness dependent magneto transport properties of WTe2 thin films[J]. SOLID STATE COMMUNICATIONS,2017,260:45-49.

Yi, Ya.,Wu, Changming.,Wang, Huanwen.,Liu, Hongchao.,Li, Hui.,...&Wang, Jiannong.(2017).Thickness dependent magneto transport properties of WTe2 thin films.SOLID STATE COMMUNICATIONS,260,45-49.

Yi, Ya,et al."Thickness dependent magneto transport properties of WTe2 thin films".SOLID STATE COMMUNICATIONS 260(2017):45-49.