Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties

Zhang, Liang1; Lin, Ben-Chuan1; Wu, Yan-Fei1; Wu, Han-Chun2; Huang, Tsung-Wei3; Chang, Ching-Ray3; Ke, Xiaoxing4; Kurttepeli, Mert5; Van Tendeloo, Gustaaf5; Xu, Jun6; Yu, Dapeng1,7; Liao, Zhi-Min1,8

2017-06

10.1021/acsnano.7b02494

ACS Nano   影响因子和分区

1936-0851

1936-086X

It has been theoretically proposed that the spin textures of surface states in a topological insulator can be directly transferred to graphene by means of the proximity effect, which is very important for realizing a two-dimensional topological insulator based on graphene. Here we report the anomalous magnetotransport properties of graphene topological insulator Bi2Se3 heterojunctions, which are sensitive to the electronic. coupling between graphene and the topological surface state. The coupling between the p(z) orbitals of graphene and the p orbitals of the surface states on the Bi2Se3 bottom surface can be enhanced by applying a perpendicular negative magnetic field, resulting in a giant negative magnetoresistance at the Dirac point up to about -91%. An obvious resistance dip in the transfer curve at the Dirac point is also observed in the hybrid devices, which is consistent with theoretical predictions of the distorted Dirac bands with nontrivial spin textures inherited from the Bi2Se3 surface states.

topological insulator electronic coupling proximity effect negative magnetoresistance asymmetric magnetoresistance

SCI ; EI

英语

NI期刊

其他

NSFC[11234001]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000404808000110

AMER CHEMICAL SOC

20172703875818

Bismuth compounds ; Electric insulators ; Enhanced magnetoresistance ; Heterojunctions ; Selenium compounds ; Surface states

Magnetism: Basic Concepts and Phenomena:701.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Chemical Products Generally:804 ; Classical Physics; Quantum Theory; Relativity:931 ; High Energy Physics; Nuclear Physics; Plasma Physics:932

Web of Science

1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
2.Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
3.Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan
4.Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
5.Univ Antwerp, EMAT Electron Microscopy Mat Sci, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
6.Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
7.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
8.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

Zhang, Liang,Lin, Ben-Chuan,Wu, Yan-Fei,et al. Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties[J]. ACS Nano,2017,11(6):6277-6285.

Zhang, Liang.,Lin, Ben-Chuan.,Wu, Yan-Fei.,Wu, Han-Chun.,Huang, Tsung-Wei.,...&Liao, Zhi-Min.(2017).Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties.ACS Nano,11(6),6277-6285.

Zhang, Liang,et al."Electronic Coupling between Graphene and Topological Insulator Induced Anomalous Magnetotransport Properties".ACS Nano 11.6(2017):6277-6285.