| 题名 | Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m-2 |
| 作者 | |
| 通讯作者 | Chung, Ren Jei; Chen, Shuming; Liu, Ru Shi |
| 发表日期 | 2017-04-04
|
| DOI | |
| 发表期刊 | |
| ISSN | 1613-6810
|
| EISSN | 1613-6829
|
| 卷号 | 13期号:13 |
| 摘要 | Cadmium-free thick-shelled InP/ZnSeS/ZnS quantum dot (QD) was synthesized using the heating-up approach. This quantum dots was used in inverted quantum dots light emitting diode (QLED) devices. The brightness of the inverted QLED device can reach a brightness of over 10 000 cd m(-2), low turn-on voltage (2.2 V), and high power efficiency (4.32 lm W-1). |
| 相关链接 | [来源记录] |
| 收录类别 | |
| 语种 | 英语
|
| 学校署名 | 通讯
|
| 资助项目 | Guangdong Natural Science Funds for Distinguished Young Scholars[2016A030306017]
|
| WOS研究方向 | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
| WOS类目 | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
| WOS记录号 | WOS:000398038500015
|
| 出版者 | |
| EI入藏号 | 20170603335551
|
| EI主题词 | Cadmium
; Electron Transport Properties
; Ii-vi Semiconductors
; Iii-v Semiconductors
; Indium Phosphide
; Lattice Mismatch
; Magnesium Compounds
; Nanocrystals
; Optical Waveguides
; Organic Light Emitting Diodes (Oled)
; Particle Size
; Quantum Chemistry
; Semiconducting Indium Phosphide
; Semiconductor Quantum Dots
; Shells (Structures)
; Thermodynamic Stability
; Zinc Sulfide
|
| EI分类号 | Structural Members And Shapes:408.2
; Nonferrous Metals And Alloys Excluding Alkali And Alkaline Earth Metals:549.3
; Thermodynamics:641.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices And Integrated Circuits:714.2
; Waveguides:714.3
; Nanotechnology:761
; Physical Chemistry:801.4
; Inorganic Compounds:804.2
; Crystal Lattice:933.1.1
|
| 来源库 | Web of Science
|
| 引用统计 |
被引频次[WOS]：138
|
| 成果类型 | 期刊论文 |
| 条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/29003 |
| 专题 | 工学院_电子与电气工程系 |
| 作者单位 | 1.Natl Taiwan Univ, Dept Chem, Taipei 106, Taiwan 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China 3.Natl Taipei Univ Technol, Dept Chem Engn & Biotechnol, Taipei 106, Taiwan 4.Ind Technol Res Inst, Mat & Chem Res Labs, Hsinchu 300, Taiwan 5.Natl Taipei Univ Technol, Dept Mech Engn, Taipei 106, Taiwan 6.Natl Taipei Univ Technol, Grad Inst Mfg Technol, Taipei 106, Taiwan |
| 通讯作者单位 | 电子与电气工程系 |
| 推荐引用方式 GB/T 7714 |
Wang, Hung Chia,Zhang, Heng,Chen, Hao Yue,et al. Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m-2[J]. Small,2017,13(13).
|
| APA |
Wang, Hung Chia.,Zhang, Heng.,Chen, Hao Yue.,Yeh, Han Cheng.,Tseng, Mei Rurng.,...&Liu, Ru Shi.(2017).Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m-2.Small,13(13).
|
| MLA |
Wang, Hung Chia,et al."Cadmium-Free InP/ZnSeS/ZnS Heterostructure-Based Quantum Dot Light-Emitting Diodes with a ZnMgO Electron Transport Layer and a Brightness of Over 10 000 cd m-2".Small 13.13(2017).
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| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | 操作 | |
| smll.201603962.pdf（2737KB） | -- | -- | 限制开放 | -- | ||
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