Origin of the enhancement in transport properties on polycrystalline SnSe with compositing two-dimensional material MoSe2

Huang, Xue-Qin1; Chen, Yue-Xing1,2,3; Yin, Meijie1; Feng, Dan1; He, Jiaqing1

2017-03-10

10.1088/1361-6528/aa55e3

NANOTECHNOLOGY   影响因子和分区

0957-4484

1361-6528

P-type SnSe compositing with 2D MoSe2 materials have been prepared by the solid solution method followed by the spark plasma sintering technique. The total thermal conductivities of SnSe/MoSe2 composites were found to be higher than for pristineSnSe at room temperature; and the disparity between them becomes smaller at higher temperatures, where the low thermal conductivities remained. Both the carrier concentration and the carrier mobility were significantly improved after MoSe2 was introduced into the SnSe matrix along the direction perpendicular to the pressing direction, leading to an extraordinary enhancement in electrical transport performance. The maximum ZT of 0.5 was obtained at 773 K for SnSe + 1.5% MoSe2 along the direction perpendicular to the pressing direction; this value is 1.5 times as large as that of the pristine SnSe.

thermoelectric materials tin selenide MoSe2 TEM

SCI ; EI

英语

第一 ; 通讯

Leading Talents of Guangdong Province Program[00201517]

Science & Technology - Other Topics ; Materials Science ; Physics

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied

WOS:000395758600003

IOP PUBLISHING LTD

20170803370305

Carrier concentration ; Layered semiconductors ; Molybdenum compounds ; Polycrystalline materials ; Selenium compounds ; Spark plasma sintering ; Thermal conductivity ; Thermoelectricity ; Tin compounds ; Transmission electron microscopy

Thermodynamics:641.1 ; Electricity: Basic Concepts and Phenomena:701.1 ; Crystalline Solids:933.1

MATERIALS SCIENCE

Web of Science

1.South Univ Sci & Technol China, Dept Phys, Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China
2.Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China
3.Wuhan Univ, Sch Phys & Technol, Wuhan 430072, Peoples R China

Huang, Xue-Qin,Chen, Yue-Xing,Yin, Meijie,et al. Origin of the enhancement in transport properties on polycrystalline SnSe with compositing two-dimensional material MoSe2[J]. NANOTECHNOLOGY,2017,28(10).

Huang, Xue-Qin,Chen, Yue-Xing,Yin, Meijie,Feng, Dan,&He, Jiaqing.(2017).Origin of the enhancement in transport properties on polycrystalline SnSe with compositing two-dimensional material MoSe2.NANOTECHNOLOGY,28(10).

Huang, Xue-Qin,et al."Origin of the enhancement in transport properties on polycrystalline SnSe with compositing two-dimensional material MoSe2".NANOTECHNOLOGY 28.10(2017).