Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy

As an important candidate for novel infrared semiconductor lasers, the optical properties of GaAsSb-based multiple quantum wells (MQWs) are crucial. The temperature-and excitation power-dependent photoluminescence (PL) spectra of the GaAs0.92Sb0.08/Al(0.2)Ga(0.8)A s MQWs, which were grown by molecular beam epitaxy, were investigated and are detailed in this work. Two competitive peaks were observed from 40 K to 90 K. The peak located at the low-energy shoulder was confirmed to be localized states emission (LE) and the high-energy side peak was confirmed to be free-carrier emission by its temperature-dependent emission peak position. It is observed that the LE peak exhibited a blueshift with the increase of laser excitation power, which can be ascribed to the band filling effect of localized states. Our studies have great significance for application of GaAsSb-based MQWs in infrared semiconductor lasers.