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题名

Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2 Monolayers

作者
通讯作者Xie, Maohai
发表日期
2017-03
DOI
发表期刊
ISSN
1936-0851
EISSN
1936-086X
卷号11期号:3页码:3282-3288
摘要
Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as hexagonal (2H) and monoclinic (1T') structures. They show very different properties: semiconducting for 2H-MoTe2 and semimetallic for 1T'-MoTe2. The formation energy difference between 2H- and 1T'-phase MoTe2 is small, so there is a high chance of tuning the structures of MoTe2 and thereby introducing applications of phase-change electronics. In this paper, we report the growth of both 2H- and 1T'-MoTe2 MLs by molecular-beam epitaxy (MBE) and demonstrate its tenability by changing the conditions of MBE. We attribute the latter to an effect of Te adsorption. By scanning tunneling microscopy and spectroscopy, we reveal not only the atomic structures and intrinsic electronic properties of the two phases of MoTe2 but also quantum confinement and quantum interference effects in the 2H- and 1T'-MoTe2 domains, respectively, as effected by domain boundaries in the samples.
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相关链接[来源记录]
收录类别
SCI ; EI
语种
英语
重要成果
NI论文
学校署名
其他
资助项目
NSFC[11521404] ; NSFC[11227404] ; NSFC[11504334] ; NSFC[U1404109]
WOS研究方向
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS记录号
WOS:000398014900094
出版者
EI入藏号
20171403517918
EI主题词
Electronic properties ; Molecular beam epitaxy ; Monolayers ; Phase transitions ; Quantum electronics ; Quantum interference devices ; Scanning tunneling microscopy ; Transition metals ; Tuning
EI分类号
Metallurgy and Metallography:531 ; Compound Semiconducting Materials:712.1.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3 ; Quantum Theory; Quantum Mechanics:931.4
来源库
Web of Science
引用统计
被引频次[WOS]:51
成果类型期刊论文
条目标识符http://sustech.caswiz.com/handle/2SGJ60CL/29099
专题理学院_物理系
作者单位
1.Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China
2.Shanghai Jiao Tong Univ, Ministry Educ, Dept Phys & Astron, Key Lab Artificial Structures & Quantum Control, 800 Dongchuan Rd, Shanghai 200240, Peoples R China
3.Innovat Ctr Adv Microstruct, Nanjing 210023, Peoples R China
4.Henan Normal Univ, Coll Phys & Elect Engn, Xinxiang 453007, Herts, Peoples R China
5.Zhengzhou Normal Univ, Sch Phys & Elect Engn, Zhengzhou 450044, Herts, Peoples R China
6.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
推荐引用方式
GB/T 7714
Chen, Jinglei,Wang, Guanyong,Tang, Yanan,et al. Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2 Monolayers[J]. ACS Nano,2017,11(3):3282-3288.
APA
Chen, Jinglei.,Wang, Guanyong.,Tang, Yanan.,Tian, Hao.,Xu, Jinpeng.,...&Xie, Maohai.(2017).Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2 Monolayers.ACS Nano,11(3),3282-3288.
MLA
Chen, Jinglei,et al."Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2 Monolayers".ACS Nano 11.3(2017):3282-3288.
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