题名 | Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers |
作者 | |
通讯作者 | Lu, Yang |
发表日期 | 2022-02-01
|
DOI | |
发表期刊 | |
ISSN | 1944-8244
|
EISSN | 1944-8252
|
卷号 | 14期号:7页码:8655-8663 |
摘要 | Conventionally, tuning materials' properties can be done through strategies such as alloying, doping, defect engineering, and phase engineering, while in fact mechanical straining can be another effective approach. In particular, elastic strain engineering (ESE), unlike conventional strain engineering mainly based on epitaxial growth, allows for continuous and reversible modulation of material properties by mechanical loading/unloading. The exceptional intrinsic mechanical properties (including elasticity and strength) of twodimensional (2D) materials make them naturally attractive candidates for potential ESE applications. Here, we demonstrated that using the strain effect to modulate the physical and chemical properties toward novel functional device applications, which could be a general strategy for various 2D materials and their heterostructures. We then show how ultralarge, uniform elastic strain in free-standing 2D monolayers can permit deep elastic strain engineering (DESE), which can result in fundamentally changed electronic and optoelectronic properties for unconventional device applications. In addition to monolayers and van der Waals (vdW) heterostructures, we propose that DESE can be also applied to twisted bilayer graphene and other emerging twisted vdW structures, allowing for unprecedented functional 2D material applications. |
关键词 | |
相关链接 | [来源记录] |
收录类别 | |
语种 | 英语
|
学校署名 | 其他
|
资助项目 | Hong Kong Research Grant Council (RGC)[RFS2021-1S05]
; National Natural Science Foundation of China (NSFC)[11825203,61904141,11922215]
; City University of Hong Kong[SRG 7005234]
; Natural Science Foundation of Shaanxi Province["2020JQ-295","2021JQ-181"]
; Shenzhen Science and Technology Innovation Committee[SGDX2020110309300301]
; Hong Kong Scholars Program[XJ2020043]
|
WOS研究方向 | Science & Technology - Other Topics
; Materials Science
|
WOS类目 | Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
|
WOS记录号 | WOS:000758036500001
|
出版者 | |
EI入藏号 | 20220811699896
|
EI主题词 | Defect engineering
; Monolayers
; Nanomechanics
; Strain
|
EI分类号 | Metallurgy and Metallography:531
; Nanotechnology:761
; Physical Chemistry:801.4
; Atomic and Molecular Physics:931.3
; Solid State Physics:933
; Crystalline Solids:933.1
; Materials Science:951
|
来源库 | Web of Science
|
引用统计 |
被引频次[WOS]:22
|
成果类型 | 期刊论文 |
条目标识符 | http://sustech.caswiz.com/handle/2SGJ60CL/291045 |
专题 | 工学院_机械与能源工程系 |
作者单位 | 1.City Univ Hong Kong, Dept Mech Engn, Kowloon, Hong Kong 999077, Peoples R China 2.Xidian Univ, Sch Mechano Elect Engn, Xian 710071, Peoples R China 3.City Univ Hong Kong, Shenzhen Res Inst, CityU Xidian Joint Lab Micro Nanomfg, Shenzhen 518057, Peoples R China 4.Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Peoples R China 5.City Univ Hong Kong, Dept Mat Sci & Engn, Hong Kong 999077, Peoples R China |
推荐引用方式 GB/T 7714 |
Han, Ying,Gao, Libo,Zhou, Jingzhuo,et al. Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers[J]. ACS Applied Materials & Interfaces,2022,14(7):8655-8663.
|
APA |
Han, Ying.,Gao, Libo.,Zhou, Jingzhuo.,Hou, Yuan.,Jia, Yanwen.,...&Lu, Yang.(2022).Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers.ACS Applied Materials & Interfaces,14(7),8655-8663.
|
MLA |
Han, Ying,et al."Deep Elastic Strain Engineering of 2D Materials and Their Twisted Bilayers".ACS Applied Materials & Interfaces 14.7(2022):8655-8663.
|
条目包含的文件 | 条目无相关文件。 |
|
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论