Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2

Zhang, Enze1,2,3; Chen, Rui1,2,3; Huang, Ce1,2,3; Yu, Jihai3,4; Zhang, Kaitai1,2; Wang, Weiyi1,2,3; Liu, Shanshan1,2,3; Ling, Jiwei1,2,3; Wan, Xiangang3,4; Lu, Hai-Zhou5; Xiu, Faxian1,2,3

2017-02

10.1021/acs.nanolett.6b04194

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Transitional metal ditelluride WTe2 has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe2. Here, we report a successful synthesis of mono-to few-layer WTe2 via chemical vapor deposition. Using atomically thin WTe2 nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe2 from weak B (T) antilocalization to weak localization, revealing a strong electrical field modulation of the spin-Orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe2 as a promising platform for exotic electronic and spintronic device applications.

WTe2 negative magnetoresistance ambipolar weak antilocalization weak localization spin-orbit interaction

SCI ; EI

英语

NI论文

其他

National Natural Science Foundation of China[61322407] ; National Natural Science Foundation of China[11474058] ; National Natural Science Foundation of China[61674040]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000393848800040

AMER CHEMICAL SOC

20170703341944

Chemical vapor deposition ; Magnetoresistance ; Physical properties ; Tellurium compounds

Magnetism: Basic Concepts and Phenomena:701.2 ; Chemical Reactions:802.2 ; Physical Properties of Gases, Liquids and Solids:931.2

MATERIALS SCIENCE

Web of Science

1.Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China
2.Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China
3.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China
4.Nanjing Univ, Sch Phys, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
5.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China

Zhang, Enze,Chen, Rui,Huang, Ce,et al. Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2[J]. NANO LETTERS,2017,17(2):878-885.

Zhang, Enze.,Chen, Rui.,Huang, Ce.,Yu, Jihai.,Zhang, Kaitai.,...&Xiu, Faxian.(2017).Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2.NANO LETTERS,17(2),878-885.

Zhang, Enze,et al."Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2".NANO LETTERS 17.2(2017):878-885.