Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Xu, Kai1,6; Chen, Dongxue1,7,8; Yang, Fengyou1,6; Wang, Zhenxin1; Yin, Lei1,6; Wang, Feng1,6; Cheng, Ruiqing1,6; Liu, Kaihui7; Xiong, Jie5; Liu, Qian1,2,3,4; He, Jun1

2017-02

10.1021/acs.nanolett.6b04576

NANO LETTERS   影响因子和分区

1530-6984

1530-6992

Two-dimensional materials (2DMs) are competitive candidates in replacing or supplementing conventional semiconductors owing to their atomically uniform thickness.-However, current conventional micro/nanofabrication technologies realize hardly ultrashort channel and integration, especially for sub-10 nm. Meanwhile, experimental device performance associated with the scaling of dimension needs to be investigated, due to the short channel effects. Here, we show a novel and universal technological method to fabricate sub-10 rim gaps with sharp edges and steep sidewalls. The realization of sub-10 nm gaps derives from a corrosion crack along the cleavage plane of Bi2O3. By this method, ultrathin body field-effect transistors (FETs), consisting of 8.2 nm channel length, 6 rim high-k dielectric, and 0.7 nm monolayer MoS2, exhibit no obvious short channel effects. The corresponding current on/off ratio and subthreshold swing reaches to 106 and 140 mV/dec, respectively. Moreover, integrated circuits with sub-10 nm channel are capable of operating as digital inverters with high voltage gain. The results suggest our technological method can be used to fabricate the ultrashort channel nanopatterns, build the experimental groundwork for 2DMs FETs with sub-10 rim channel length and 2DMs integrated circuits, and offer new potential opportunities for large-scale device constructions and applications.

Sub-10 nm nanopatterns 2D materials field-effect transistors very-large-scale integration

SCI ; EI

英语

NI期刊

其他

Strategic Priority Research Program of the Chinese Academy of Sciences[XDA 09040201] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDA 09020300]

Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter

WOS:000393848800065

AMER CHEMICAL SOC

20170703341077

Bismuth compounds ; High-k dielectric ; Layered semiconductors ; Molybdenum compounds ; Threshold voltage ; VLSI circuits

Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2

MATERIALS SCIENCE

Web of Science

1.Chinese Acad Sci, Key Lab Nanosyst & Hierarchy Fabricat, CAS Ctr Excellence Nanosci, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
2.Nankai Univ, MOE Key Lab Weak Light Nonlinear Photon, Tianjin 300457, Peoples R China
3.Nankai Univ, TEDA Appl Phys Inst, Tianjin 300457, Peoples R China
4.Nankai Univ, Sch Phys, Tianjin 300457, Peoples R China
5.Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China
6.Univ Chinese Acad Sci, Beijing 100080, Peoples R China
7.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
8.South Univ Sci & Technol China, Dept Phys, Shenzhen 518005, Peoples R China

Xu, Kai,Chen, Dongxue,Yang, Fengyou,et al. Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors[J]. NANO LETTERS,2017,17(2):1065-1070.

Xu, Kai.,Chen, Dongxue.,Yang, Fengyou.,Wang, Zhenxin.,Yin, Lei.,...&He, Jun.(2017).Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors.NANO LETTERS,17(2),1065-1070.

Xu, Kai,et al."Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors".NANO LETTERS 17.2(2017):1065-1070.